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Title:Microstructure and Electrical Properties of Mocvd-Derived Perovskite Lead Zirconium(x) Titanium(1-X) Oxygen(3) and Lead (Scandium Tantalum)(1-X) Titanium(x) Oxygen(3) Thin Films on Lanthanum Nickel Oxide Electrode-Buffered Silicon
Author(s):Lin, Chun-Hsiung
Doctoral Committee Chair(s):Chen, Haydn
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Materials Science
Abstract:(3) Using the experience accumulated from growing PZT thin films, we expanded the work to grow relaxor ferroelectric thin films. Solid solutions of Pb(Sc1/2Ta1/2)1-xTixO 3 (x = 0--0.3) (PSTT) were grown. Phase evolution of the PSTT thin films with respect to the growth conditions, including growth temperature, processing of the bottom electrode and the individual source flow rates, is discussed. The diffuse phase transition of the relaxor ferroelectric thin film was characterized by its dielectric dispersion. Moreover, effect of an AC field on the dielectric relaxation behavior of the relaxor PSTT thin films was studied. The results were qualitatively explained by the current theories of relaxor ferroelectrics. Pyroelectric properties of the PSTT thin films were also demonstrated.
Issue Date:2000
Description:148 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.
Other Identifier(s):(MiAaPQ)AAI9971121
Date Available in IDEALS:2015-09-25
Date Deposited:2000

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