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Title:Silicon (011) and Silicon Germanium (011) Gas-Source Molecular Beam Epitaxy: Surface Reconstructions, Growth Kinetics, and Germanium Segregation
Author(s):Taylor, Nerissa Sue
Doctoral Committee Chair(s):Greene, Joseph E.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Materials Science
Abstract:Ge surface segregation occurs during Si1--xGex(011) GS-MBE. Ge surface coverages thetaGe increase with x, ranging from 0.27 to 0.74 ML for x = 0.04--0.20. At a given film composition, theta Ge decreases with decreasing Ts due to the corresponding increase in the fraction of H-bonded Si surface atoms, fSi,H. From these data, we find that the Ge segregation enthalpy DeltaHs for Si1--xGex(011) varies from --0.18 eV at Ts = 750°C (fSi,H < 0.003) to --0.09 eV at Ts = 475°C (fSi,H = 0.22).
Issue Date:2000
Description:119 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.
Other Identifier(s):(MiAaPQ)AAI9971202
Date Available in IDEALS:2015-09-25
Date Deposited:2000

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