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Title:Formation of Porous Silicon Carbide and Its Suitability as a Chemical and Temperature Detector
Author(s):Rittenhouse, Tilghman Lee
Doctoral Committee Chair(s):Bohn, Paul W.
Department / Program:Chemistry
Discipline:Chemistry
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:Anodically etched PSiC films are then investigated for their suitability as chemical and temperature detectors. PSiC layers were unresponsive in interferometry for a wide variety of adsorbate gases, and this method of analyte detection proved unsuccessful. Conductometric investigations show that PSiC has a measurable response to high concentrations of hydrogen gas (∼6% decrease in resistance when exposed to 20% H2) comparable to currently used platinum alloy resistive films. Current hydrogen sensing arrays may be improved by the introduction of a PSiC sensor for the specific role of high concentration sensing.
Issue Date:2004
Type:Text
Language:English
Description:140 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.
URI:http://hdl.handle.net/2142/84162
Other Identifier(s):(MiAaPQ)AAI3153413
Date Available in IDEALS:2015-09-25
Date Deposited:2004


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