Files in this item

FilesDescriptionFormat

application/pdf

application/pdf3337930.pdf (10MB)Restricted to U of Illinois
(no description provided)PDF

Description

Title:Copper Surface Chemistry Relevant to Chemical Mechanical Planarization (Cmp)
Author(s):Stewart, Karen Lynn
Doctoral Committee Chair(s):Gewirth, Andrew A.
Department / Program:Chemistry
Discipline:Chemistry
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Chemistry, Analytical
Abstract:A third project investigated the effect of structure of corrosion inhibitors benzotriazole and 1,2,4-triazole (TAZ) on copper removal rate during CMP. Removal rates were higher for solutions containing TAZ than solutions containing BTA. The corrosion inhibitor films were characterized using AFM, cyclic voltammetry, impedance spectroscopy, surface-enhanced Raman spectroscopy, and mass spectrometry. Inhibitor films formed from TAZ were thicker, more permeable, and rougher than films formed from BTA. The addition of glycine to these solutions showed an increase in corrosion for the TAZ-covered surface, little change to the BTA-covered surface, and an increase in removal for both systems. This study correlated removal rate with the physical properties of these two different corrosion inhibitors.
Issue Date:2008
Type:Text
Language:English
Description:166 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.
URI:http://hdl.handle.net/2142/84321
Other Identifier(s):(MiAaPQ)AAI3337930
Date Available in IDEALS:2015-09-25
Date Deposited:2008


This item appears in the following Collection(s)

Item Statistics