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Title:Characterization of Etching Process and Etch Rate of Aluminum Thin Film
Author(s):Kang, "Ryan" Sungho
Contributor(s):Gong, Songbin
Subject(s):micro-electro-mechanical systems (MEMS)
RF MEMS
micro-fabrication etching
lithography
physical vapor disposition (PVD)
Abstract:This thesis reports on characterization of etching process of aluminum thin film. It offers sequential steps of optimized etching process as well as the etch rate of aluminum thin film--one of the ubiquitous metals in MEMS and IC industries| for on-going RF MEMS research. To gain high device performance, an effi cient and accurate fabrication process is critical. Despite a number of previous studies on etch rate characterization, unique tuning methods and fabrication recipes are required for different instruments and laboratories. In this report, the etching characterization is performed using PlasmaLab Master/Slave Reactive Ion Etching (RIE) System with flows of boron trichloride (BCl3) and chlorine gas (Cl2). Drawbacks of the tools and chemicals as well as corresponding adjustments are also discussed. Along with aluminum etch rate, etch rate of photoresist under the same parameters can also be evaluated in the same manner. The results of both etch rates are covered in this paper.
Issue Date:2014-12
Genre:Other
Type:Other
Language:English
URI:http://hdl.handle.net/2142/87845
Date Available in IDEALS:2015-09-28


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