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Title:Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy
Author(s):Choi, Wonsik
Advisor(s):Li, Xiuling
Department / Program:Electrical & Computer Engineering
Discipline:Electrical & Computer Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):selective lateral epitaxy (SLE)
semiconductor nanowires (SNWs)
metal -organic chemical vapor deposition (MOCVD)
Abstract:Realizing lateral p-n junction is a critical technique to fabricate electronic and optic devices. Recently, lateral p-n junctions were achieved by ex-situ doping on thin film or in-situ doping of vertical nanowire (NW). However, fabricating lateral junctions on thin film are less effective due to the difficulties in defining abrupt junction geometry and escaping physical damages from the post-doping process. Utilizing monolithically grown lateral p-n junction vertical NW also has problem because the as-grown NWs are not compatible with conventional planar device processing. In this thesis research, arrays of lateral p-n junction planar GaAs NW diodes grown by selective lateral epitaxy (SLE) mechanism was developed to overcome the limitations of current lateral p-n junctions in thin films and vertical NWs. Size and position controlled array of lateral p-n junction planar GaAs NWs were monolithically grown on semi-insulating GaAs (100) substrate using metal-organic chemical vapor deposition (MOCVD). The realization of lateral p-n junction diodes was confirmed by measuring two terminal I-V characteristics of the devices. The device was turned on at 1.2 V of diode voltage, and the 106 of rectification ratio and 2.18 of ideality factor were measured. The forward-biased current scales with the number of contacted NWs. Finally, the doping concentration modulation capability on SLE grown planar p-n NWs were verified.
Issue Date:2015-07-21
Rights Information:Copyright 2015 Wonsik Choi
Date Available in IDEALS:2015-09-29
Date Deposited:August 201

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