Browse Dept. of Physics by Subject "Scanning Tunneling Microscopy (STM)"
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Character of the electronic states near the metal-insulator transition in Gallium Manganese Arsenide (2010-01-06)The character of electronic states near the Mott-Anderson metal-insulator transition in the ferromagnetic semiconductor Ga1-xMnxAs is studied by cross sectional scanning tunneling microscopy. 200nm thick samples grown by ...
Degradation Studies of Ultrathin Silicon Oxide Under Electrical Stress Using a Scanning Tunneling Microscope (1999)
(2010-05-20)Understanding the mechanism by which d-wave superconductivity in the cuprates emerges and is optimized by doping a Mott insulator is one of the major outstanding problems in physics. A key unresolved question in this field ...