# Browse Dissertations and Theses - Electrical and Computer Engineering by Contributor "Adesida, Ilesanmi"

• (2010-01-06)
High work function metals--Ni, Pt, Ir, and Au--were comparatively studied as Schottky metallizations to GaN and AlGaN/GaN heterostructures. Ni/Au, Ni/Pt/Au, Ir/Au, Ir/Pt/Au and Pt/Au Schottky diodes were fabricated on GaN ...

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• (2009)
The developed ion-implantation process was used to propose fabrication schemes for novel high speed self-aligned and non-self-aligned AlGaN/GaN high electron mobility trasistors (HEMTs) employing Ir/Pt/Au or Ni/Au gate and ...

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• (2009)
Using all the processing advancements demonstrated through the research undertaken in this dissertation highlights the potential of GaN-based transistors for next generation millimeter-wave applications, and possibly digital ...

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• (1990)
Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$\sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, ...

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• (1995)
InP-based heterostructure field effect transistors (HFETs) have, over the past several years, demonstrated microwave performance capabilities superior to those of GaAs-based and Si-based transistors. In particular, ...

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• (1994)
The realization of a two-dimensional electron gas in semiconductor heterostructures due to advanced epitaxial growth techniques has led to novel high-speed devices such as modulation-doped field effect transistors and ...

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• (2005)
Consequently, Ir-based gate metallization has a potential to replace conventional gate metals such as Ti/Pt/Au for D-HEMTs and Pt/Ti/Pt/Au for E-HEMTs. Due to the high thermal stability of Ir-based gate contacts, highly ...

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• (1992)
Intense material and device research aimed toward high-speed digital circuits and optoelectronic integrated circuits (OEICs) has focused on III-V compound semiconductors such as GaAs-based and InP-based materials because ...

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• (1996)
Semiconductor optoelectronic devices are expected to have their performance improved by the use of quantum confinement in the active region with sizes in the range of tenths of nanometers. The decrease in volume of the ...

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• (2008)
The AlGaN/GaN high electron mobility transistor (HEMT) is a promising candidate for microwave applications due to its high power and low noise characteristics at such frequencies. As a result of improved material growth ...

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• (2004)
AlGaN/GaN high electron mobility transistors (HEMTs) have shown promising high speed performance, both high microwave power and low microwave noise. In this dissertation, the millimeter-wave and microwave power performance ...

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• (1996)
For future long-haul optical fiber telecommunication systems, the development of monolithically integrated, high-speed $(>10$Gb/s) long wavelength photoreceivers is of considerable interest due to the potential advantages ...

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• (1993)
It has been found that the barrier height lowering observed in reverse-biased Schottky junction is due mainly to the change in electrical potential across the interfacial layer at the metal-semiconductor contact. The voltage ...

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• (1991)
The success of optical interconnects for computer communications depends critically on the development of a viable monolithic optoelectronic integrated circuit (OEIC) technology. A key component of any lightwave communication ...

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• (1999)
By using a buried-Pt process in conjunction with proper heterostructure design, a procedure for the fabrication of enhancement-mode HEMTs (E-HEMTs) has been developed. Following the full characterization of E-HEMT devices, ...

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• (2002)
Long wavelength In0.53Ga0.47As photodiodes as well as In0.52Al0.48As/In0.53Ga0.47 As high electron mobility transistors (HEMTs) have mainly been fabricated on InP based material systems because these ternary materials are ...

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• (2006)
Excellent ohmic contacts based on Ge/Ag/Ni metallization have been developed for InAlAs/InGaAs/InP high electron mobility transistors (HEMTs) in a temperature range between 385 and 500°C for the first time. A minimum ...

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• (2004)
In this work, the development and characterization of electrical and materials performance of ohmic contacts are presented. Surface treatment techniques were developed to improve the electrical characteristics of ohmic ...

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• (1999)
The fabrication of AlGaN/GaN HFETs entailed first developing fundamental processing techniques such as isolation etching, low-resistance drain/source ohmic contacts, and Schottky gate formation. These efforts along with ...

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• (2008)
Finally, a novel SiN/ALD Al2O3/SiN dielectric trilayer T-gate formation process was developed for nanometer-scale (∼50 nm) recessed T-gate devices. Using a novel isotropic dry etching method, the top SiN layer was ...

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