# Browse Dissertations and Theses - Electrical and Computer Engineering by Contributor "Holonyak, Nick, Jr."

• (2003)
Data are presented showing that, besides the improvement in carrier collection, it is advantageous to locate strain-matching auxiliary InGaAs layers [quantum wells (QWs)] within tunneling distance of a single-quantum-dot ...

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• (1998)
In order to overcome the inherent limitations of epitaxial material grown on a single substrate, wafer bonding has been developed over the last decade and is now introduced to the Solid State Devices Laboratory. Resistors ...

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• (1989)
The process of impurity-induced layer disordering (IILD), or layer intermixing, in Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs), and in related III-V quantum well ...

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• (2010-01-06)
The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of ...

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• (2003)
Data (infrared wavelengths) are presented showing that it is advantageous to locate strain-matching auxiliary InGaAs layers QWs within tunneling distance of a single QD layer of an AlGaAs-GaAs-InGaAs-InAs QD heterostructure ...

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• (2010-08-20)
The transistor laser is a unique three-port device that operates simultaneously as a transistor and a laser. With quantum wells incorporated in the base regions of heterojunction bipolar transistors, the transistor laser ...

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• (2011-01-21)
Carrier spontaneous recombination lifetime has been thought to be limited to ~ 1 ns in light-emitting diodes and diode lasers for the past forty years. In the present work the recombination lifetime demonstrated is able ...

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• (1990)
The growth of reliable III-V semiconductor lasers on Si would be a significant step toward the fabrication of an opto-electronic integrated circuit, but reliable III-V semiconductor lasers grown on Si have yet to be reported. ...

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• (2012-02-01)
The prevalence of mobile computing devices and emerging demand for high data rate communication have motivated development of low power consumption, high performance circuits composed of compound semiconductor heterojunction ...

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• (1989)
In the experiments described here, Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As-GaAs superlattice and quantum well heterostructure (QWH) crystals have been used as test vehicles to study Al-Ga interdiffusion. The data demonstrate that ...

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• (1967-10-31)

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• (1995)
In this work, a water vapor oxidation process is used to convert high Al composition $\rm Al\sb{x}Ga\sb{1-x}As$ to a stable native oxide. The native oxides described are formed at temperatures in the range of 400$\rm\sp\circ ... application/pdf PDF (3MB) • (1992) In these experiments, water vapor oxidation of Al-bearing III-V semiconductors is employed to form high quality native oxides. The oxides are examined using secondary ion mass spectrometry (SIMS) and transmission electron ... application/pdf PDF (3MB) • (1995) In this work, water vapor oxidation of Al-bearing III--V semiconductors is employed to form high quality native oxides. The native oxides described are formed at temperatures in the range of 400$\sp\circ$C to 450$\sp\circ$C. ... application/pdf PDF (2MB) • (1991) Data are presented on Al$\sb{\rm y}$Ga$\sb{\rm 1-y}$As-GaAs-In$\sb{\rm x}$Ga$\sb{\rm 1-x}$As quantum well heterostructure diode lasers showing that the large band filling range of a combined GaAs-In$\sb{\rm x}$Ga$\sb{\rm ...

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• (1990)
Data are presented demonstrating that the control of the edge-to-edge resonator Q across a cleaved rectangular sample is essential in identifying unambiguously photopumped phonon-assisted laser operation of Al$\sb{\rm ... application/pdf PDF (2MB) • (2011-01-21) The transistor laser (TL) o ers advantages over conventional diode laser structure. The TL uses high base doping and minority carrier collection to reduce the recombination lifetime in the active region of the device to ... application/pdf PDF (23MB) • (1972-05) application/pdf PDF (2MB) • (1995) In the present work, a water vapor oxidation process is used to convert high Al-composition$\rm Al\sb{x}Ga\sb{1-x}As\ and\ In\sb{0.5}(Al\sb{x}Ga\sb{1-x})\sb{0.5}P$to stable, device-quality native oxides. The insulating ... application/pdf PDF (2MB) • (1996) In this work, the water vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate light-emitting and electronic devices. High Al-composition heterostructure crystals such as Al$\sb{\rm x}$Ga$\sb{\rm ...

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