# Browse Dissertations and Theses - Electrical and Computer Engineering by Contributor "Stillman, Gregory E."

• (1994)
The In$\rm\sb{0.5}Ga\sb{0.5}$P/GaAs materials system has been investigated for use in heterojunction bipolar transistor applications. This material possesses several properties which make it attractive as a potential ...

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• (1993)
The development of carbon doping for producing stable p-type doping profiles in MOCVD-grown GaAs has made MOCVD the preferred technique for production of highly reliable GaAs-based HBT structures. In the InP/InGaAs materials ...

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• (1990)
A dilute mixture of CCl$\sb4$ in high purity H$\sb2$ has been used as a carbon dopant source for $\rm Al\sb{x}Ga\sb{1-x}As$ grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism ...

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• (1989)
The incorporation and amphoteric behavior of Group IV impurities in high purity gallium arsenide (GaAs) and indium phosphide (InP) grown by various growth techniques have been quantitatively studied by employing the ...

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• (1990)
A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular ...

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• (1996)
The heterojunction bipolar transistor (HBT) is a device whose time has come. The high gains, linearity, power efficiencies, current handling capabilities, and speeds available with HBT technology make this device attractive ...

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• (1994)
Metalorganic molecular beam epitaxy (MOMBE) offers several potential advantages over molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) for the development of high-speed/reliability C-doped ...

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• (1988)
Impact ionization coefficients are important parameters for the understanding of high field transport in semiconductors. Previous experimental data on impact ionization coefficients have indicated that the bandstructure ...

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• (1998)
Using the optimized growth conditions for layer growth as well as for interfaces, C-doped base InP/InGaAs HBT structures have been grown and characterized. For standard HBT devices employing InGaAs contacting layers, ...

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• (1998)
Although device physics and semiconductor theory were an essential part of this research, few new theoretical calculations or predictions were made. Rather, this thesis relied heavily on the work of those, who early in the ...

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• (1998)
To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance ...

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• (1989)
The growth and characterization of epitaxial indium gallium arsenide phosphide compound semiconductor films are described. Methods have been developed to improve the purity of both InP and GaAs and to better assess the ...

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• (1988)
A new technique has been developed to measure the conduction band discontinuities ($\Delta$E$\sb{\rm c})$ at certain semiconductor heterojunctions. The technique involves measuring the spectral response of specially designed ...

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• (1998)
The activation energy of the IRV was extracted from variable temperature TRPL measurements performed on selected samples. The activation energies of the interface recombination velocities agreed with previously established ...

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• (1994)
Data are presented on various infrared detectors based on multiple GaAs/AlGaAs quantum wells. Due to the great flexibility in the growth, dimensions, and composition of these structures, the electrical and optical ...

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• (1999)
The impact of the emitter and cap growth conditions on the gain of heterojunction bipolar transistors (HBTs) was studied by annealing to simulate the prolonged growth of HBTs with a heavily carbon-doped base. The results ...

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• (2000)
The magneto-transport method is a technique that allows the simultaneous measurement of the minority electron mobility in the base of the HBT and the dc current gain of the device. The minority electron lifetime can be ...

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• (1990)
The quaternary material aluminum gallium indium prosphide (($\rm Al\sb{x}Ga\sb{1-x})\sb{y}In\sb{1-y}P$) is used in the fabrication of visible lasers and light emitting diodes. There are problems in this material related ...

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• (1988)
Although low compensation, undoped n-type GaAs is needed for many device applications, residual impurities limit the purity of metalorganic chemical vapor deposition grown material. Novel experimental techniques were ...

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• (1996)
Epitaxial layers of semi-insulating (SI) InP are useful for a number of optoelectronic device applications. These layers are utilized for current confinement in buried heterostructure lasers, and they have found an application ...

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