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Title:A study of the creation and characterization of nitrogen doped CuInSe2 (CIS:N), as a potential improved back contact material for CdTe and Cu(IN_xGA_1-x)Se2 photovoltaic cells
Author(s):Erickson, Thomas Glenn
Advisor(s):Rockett, Angus Alexander
Department / Program:Materials Science & Engineerng
Discipline:Materials Science & Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:M.S.
Genre:Thesis
Subject(s):Thin Film Photovoltaics
CuInSe2
Physical Vapor Deposition
Electronic Materials
Abstract:Nitrogen is incorporated into CuInSe2 (CIS), and other related materials, using a scalable, commonly used, technique. The growth characteristics, film morphology and electronic properties of these N doped materials, as it is affected by nitrogen, are studied, both in films grown with nitrogen, and in films implanted with nitrogen.
Issue Date:2016-07-21
Type:Thesis
URI:http://hdl.handle.net/2142/92675
Rights Information:Copyright 2016 Thomas Erickson
Date Available in IDEALS:2016-11-10
Date Deposited:2016-08


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