Files in this item



application/pdfLIU-DISSERTATION-2016.pdf (7MB)
(no description provided)PDF


Title:Development of high speed vertical cavity surface-emitting semiconductor diode laser and transistor laser
Author(s):Liu, Michael E
Director of Research:Feng, Milton
Doctoral Committee Chair(s):Feng, Milton
Doctoral Committee Member(s):Jin, Jianming; Dallesasse, John M.; Bayram, Can
Department / Program:Electrical & Computer Eng
Discipline:Electrical & Computer Engr
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Vertical Cavity Surface-Emitting Laser
Vertical Cavity Transistor Laser
Abstract:High speed semiconductor lasers are used in optical transceivers for short-reach data links. With fast-growing data capacity and traffic in the data centers around the globe, faster optical transceivers are demanded. A microcavity vertical cavity surface-emitting laser (VCSEL) is able to show a high modulation bandwidth as well as single-mode operation; however, because of the small oxide aperture (< 3 µm), a microcavity VCSEL shows high resistance and low optical power. An 850 nm oxide-confined VCSEL with an aperture ~4 µm is able to show error-free transmission at 40 Gb/s. With an advanced DBR design for parasitic reduction as well as better thermal conduction and a short 0.5-λ cavity with five quantum wells, an 850 nm VCSEL is able to demonstrate 57 Gb/s error-free transmission at 25 °C and 50 Gb/s error-free transmission at 85 °C. The dynamic carrier profile in the base of a transistor laser makes it possible to have a shorter carrier lifetime than in a diode laser. The first oxide-confined vertical cavity transistor laser (VCTL) is realized with a trench oxidation process and a lateral-feeding base metal design. To further reduce the excessive emitter series resistance, a VCTL with AlGaAs and dielectric distributed Bragg reflector (DBR) is fabricated. Because of the mismatch between the cavity design and the quantum well emission, the VCTL is only able to show stimulated emission at low temperatures.
Issue Date:2016-07-06
Rights Information:Copyright 2016 Michael Liu
Date Available in IDEALS:2016-11-10
Date Deposited:2016-08

This item appears in the following Collection(s)

Item Statistics