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Title:A Study of Newtron Irradiation Effects on Gallium Arsenide Semiconductor Materials
Author(s):Yang, Siyuan
Discipline:Nuclear, Plasma, and Radiological Engineering
Degree:M.S. (master's)
Genre:Thesis
Subject(s):nuclear engineering
neutron irradiation effects
gallium arsenide
semiconductor materials
displacement kerma
n-type GaAs
neutron fluence
reciprocal Hall mobility
Issue Date:1989
Genre:Dissertation/Thesis
Type:Text
Language:English
URI:http://hdl.handle.net/2142/96608
Rights Information:Copyright 2009 Chen Xi
Date Available in IDEALS:2017-07-06


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