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Title:LASER SPECTROSCOPY OF THE JET-COOLED SiCF FREE RADICAL
Author(s):Smith, Tony
Contributor(s):Clouthier, Dennis
Subject(s):Radicals
Abstract:The SiCF free radical has been detected through the A$^{2}$$Sigma$$^{+}$-X$^{2}$$Pi$ band system in the 605 - 550 nm region. The radical was produced in an electric discharge through a dilute mixture of CF$_{3}$SiH$_{3}$ in high pressure argon and studied by laser induced fluorescence. The vibronic levels of the ground and excited states have been measured through LIF and emission spectroscopy and a Renner-Teller analysis has been undertaken for the ground $^{2}$$Pi$ levels. The observed vibrational frequencies, partially resolved rotational band contours, Renner-Teller parameter, and electronic excitation energy are in accord with our predictions from high level ab initio (CCSD(T)/aug-cc-pVTZ) calculations. Theory shows that the radical has a silicon-carbon double bond in the ground state and a much shorter triple bond in the excited state. This is the third in the series of SiCX (X = H, Cl, and F) free radicals we have produced and studied in the gas phase.
Issue Date:6/22/2017
Publisher:International Symposium on Molecular Spectroscopy
Citation Info:APS
Genre:CONFERENCE PAPER/PRESENTATION
Type:Text
Language:English
URI:http://hdl.handle.net/2142/97163
DOI:10.15278/isms.2017.RJ12
Date Available in IDEALS:2017-07-27


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