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 Title: LASER SPECTROSCOPY OF THE JET-COOLED SiCF FREE RADICAL Author(s): Smith, Tony Contributor(s): Clouthier, Dennis Subject(s): Radicals Abstract: The SiCF free radical has been detected through the A$^{2}$$Sigma$$^{+}$-X$^{2}$$Pi band system in the 605 - 550 nm region. The radical was produced in an electric discharge through a dilute mixture of CF_{3}SiH_{3} in high pressure argon and studied by laser induced fluorescence. The vibronic levels of the ground and excited states have been measured through LIF and emission spectroscopy and a Renner-Teller analysis has been undertaken for the ground ^{2}$$Pi$ levels. The observed vibrational frequencies, partially resolved rotational band contours, Renner-Teller parameter, and electronic excitation energy are in accord with our predictions from high level ab initio (CCSD(T)/aug-cc-pVTZ) calculations. Theory shows that the radical has a silicon-carbon double bond in the ground state and a much shorter triple bond in the excited state. This is the third in the series of SiCX (X = H, Cl, and F) free radicals we have produced and studied in the gas phase. Issue Date: 6/22/2017 Publisher: International Symposium on Molecular Spectroscopy Citation Info: APS Genre: CONFERENCE PAPER/PRESENTATION Type: Text Language: English URI: http://hdl.handle.net/2142/97163 DOI: 10.15278/isms.2017.RJ12 Date Available in IDEALS: 2017-07-272018-01-29
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