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Title:Gallium nitride based Schottky barrier diodes
Author(s):Kelly, Frank
Contributor(s):Kim, Kyekyoon
Subject(s):GaN
power electronics
PAMBE
device processing
Abstract:This work seeks to explore devices integral to the next generation of power electronics. To do this, gallium nitride (GaN) based Schottky barrier diodes (SBDs) are fabricated, tested, and characterized. The following is a discussion of the GaN thin film growth system and processing methods necessary to produce working devices. GaN films are grown via plasma assisted molecular beam epitaxy (PAMBE) which are then patterned via photolithography and etching. For this, a photomask set was designed and made. Plasma enhanced chemical vapor deposition (PECVD), metal evaporation, rapid thermal annealing (RTA) and additional patterning steps are used to create contacts. Films are tested for crystalline quality and composition/doping levels. Devices are then tested for CV and IV characteristics from which different device parameters are determined.
Issue Date:2018-05
Genre:Other
Type:Text
Language:English
URI:http://hdl.handle.net/2142/99996
Date Available in IDEALS:2018-05-23


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