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Semiconductor Laser, Transistor Laser, optical interconnect Feng, Milton Feng, Milton Jin, Jianming Dallesasse, John M. Dragic, Peter Wang, Curtis Yilin 2019-02-07T20:35:53Z 2019-02-07T20:35:53Z 2021-02-08T10:15:32Z 2018-10-08 2018-12 Semiconductor lasers are widely deployed in optical transceivers for optical fiber based short-reach (< 100m) data links. With increasingly growing data traffic worldwide in data centers, developments of faster optical transceivers, hence high-speed semiconductor lasers, are highly demanded. The vertical cavity surface-emitting laser (VCSEL) is the most commercially popular choice. With high reflectivity DBR mirrors and oxide-confinement for emission mode control and leakage current reduction, VCSELs are able to achieve a low laser threshold and high modulation bandwidth. Currently in published research results, the highest data transmission rate demonstrated for an 850 nm VCSEL is 57 Gb/s error-free at 25 °C and 50 Gb/s error-free at 85 °C. Nevertheless, the bandwidth and data transmission performance of diode lasers, such as VCSELs, are fundamentally limited by the slow spontaneous recombination lifetime. Therefore, a new kind of semiconductor laser, the transistor laser (TL), is proposed to break the bandwidth bottleneck as the dynamic carrier transport in the base of a TL drastically reduces the spontaneous recombination lifetime. Ultimately to reach low threshold and high energy per bit efficiency, the first oxide-confined vertical cavity transistor laser (VCTL) is realized with a trench oxidation process and a lateral-feeding base metal design. To further reduce the excessive emitter series resistance, a VCTL with partially etched mesa is developed and fabricated. The tunneling modulation aspect and possible application of the TL is also explored in this dissertation. Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2020-12-01 The student, Curtis Wang, accepted the attached license on 2018-10-04 at 00:08. The student, Curtis Wang, submitted this Dissertation for approval on 2018-10-04 at 00:14. This Dissertation was approved for publication on 2018-10-08 at 13:11. DSpace SAF Submission Ingestion Package generated from Vireo submission #13027 on 2019-02-07 at 14:16:42 Made available in DSpace on 2019-02-07T20:35:53Z (GMT). No. of bitstreams: 2 WANG-DISSERTATION-2018.pdf: 5094810 bytes, checksum: b3cd3c0292c0c4da90cf7feca1115f54 (MD5) LICENSE.txt: 4208 bytes, checksum: e28a7e77a7ade8a2fd36c51579d613a6 (MD5) Previous issue date: 2018-10-08 Embargo set by: Seth Robbins for item 109807 Lift date: 2021-02-07T20:36:09Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system Embargo set by: Seth Robbins for item 109807 Lift date: 2021-02-07T20:39:46Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system Embargo set by: Seth Robbins for item 109807 Lift date: 2021-02-07T20:44:35Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system U of I Only Restriction Lifted for Item 109807 on 2021-02-08T10:15:32Z. application/pdf http://hdl.handle.net/2142/102783 en Copyright 2018 Curtis Wang Microwave characterization of vertical cavity surface emitting diode laser and transistor laser text text Electrical & Computer Eng Electrical & Computer Engr University of Illinois at Urbana-Champaign Dissertation Ph.D.