2026-09-22T03:28:31Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/108347 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Li, Xiuling Michaels, Julian Arthur 2020-08-27T00:51:32Z 2020-08-27T00:51:32Z 2022-08-27T00:51:40Z 2020-05-12 2020-05 Metal-assisted chemical etching (MacEtch) is a wet etching method that can produce high aspect ratio nanostructures with minimal crystal damage. The MacEtch process has been demonstrated to overcome limitations of dry and wet etching in several materials, studied extensively since its discovery by Li and Bohn in 2000. These include several semiconductor substrates (Si, GaAs, InP, GaP, GaN, Ga2O3, and SiC) and catalysts (Au, Ag, Pt, Pd, graphene, Cu), each demonstrated with different degrees of anisotropy, porosity, and etching conditions. SiC has only ever been demonstrated to etch with a porous layer generated using a wet etching method. This is a serious limitation for its applicability to a wider range of etching applications. In this thesis, nanoscale nonporous wet etching is demonstrated on 4H-SiC. Both photolithography and nanosphere lithography are used to pattern the substrate, being compared in etch quality and characteristics. Control of porosity and etch rate are presented, with a mechanism analysis provided to complement the explanations in the literature. Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2022-05-01 The student, Julian Michaels, accepted the attached license on 2020-05-12 at 13:11. The student, Julian Michaels, submitted this Thesis for approval on 2020-05-12 at 13:24. This Thesis was approved for publication on 2020-05-12 at 16:36. DSpace SAF Submission Ingestion Package generated from Vireo submission #15354 on 2020-08-25 at 17:44:23 Made available in DSpace on 2020-08-27T00:51:32Z (GMT). No. of bitstreams: 2 MICHAELS-THESIS-2020.pdf: 1453595 bytes, checksum: 696e06218750c1f2d7f31337ad1ee5b3 (MD5) LICENSE.txt: 4212 bytes, checksum: 8731fbe7c41f67cf8d2c801bc8a1da9c (MD5) Previous issue date: 2020-05-12 Embargo set by: Seth Robbins for item 115962 Lift date: 2022-08-27T00:51:40Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system Author requested closed access (OA after 2yrs) in Vireo ETD system Limited application/pdf http://hdl.handle.net/2142/108347 en Copyright 2020 Julian Michaels SiC Metal-assisted Chemical Etch, porous silicon carbide, photochemical, Etching, nanotechnology, nanosphere lithography Metal-assisted chemical etching of 4H silicon carbide text Thesis Electrical & Computer Eng Electrical & Computer Engr University of Illinois at Urbana-Champaign Thesis M.S.