2026-09-21T13:07:45Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/110734 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Banerjee, Arijit Wang, Patrick John 2021-09-17T02:34:46Z 2021-09-17T02:34:46Z 2023-09-17T02:34:57Z 2021-04-26 2021-05 Silicon carbide (SiC) MOSFETs are widely acknowledged for low loss, fast switching and remarkable thermal conductivity compared to silicon (Si) counterparts. SiC-based power electronic converters, therefore, are optimal when operated at medium voltage to high voltage in high switching frequency applications, which results in a much higher power density than Si-based power converters. The reliability of SiC devices, however, remains a significant hindrance to their wide adoption in power electronics in transportation, industry and military applications. Real-time condition monitoring of SiC devices in SiC-based power converters addresses the reliability issues by providing an early sign of potential failure. Since one of the most consistent failure precursors of a degraded SiC MOSFET is an increase of gate leakage current, a circuitry is developed to track and estimate the on-state gate leakage current of the device during operation. To demonstrate the functionality of the proposed method, an LLC full-bridge resonant converter that operates at a medium voltage and high switching frequency was designed and used to obtain the experimental results. This converter will operate at various duty ratios, DC-link voltages, switching frequencies and output loads to show the consistency and accuracy of the proposed condition monitoring method. With proper calibration, this cost-effective method obtains an accurate gate leakage estimation which opens opportunities to perform prognostic and health monitoring of SiC devices. Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2023-05-01 The student, Patrick Wang, accepted the attached license on 2021-04-23 at 02:17. The student, Patrick Wang, submitted this Thesis for approval on 2021-04-23 at 02:49. This Thesis was approved for publication on 2021-04-26 at 14:56. DSpace SAF Submission Ingestion Package generated from Vireo submission #16521 on 2021-09-16 at 17:05:03 Made available in DSpace on 2021-09-17T02:34:46Z (GMT). No. of bitstreams: 2 WANG-THESIS-2021.pdf: 3989448 bytes, checksum: 4c01caab9984d3ea29b899ded9a62fea (MD5) LICENSE.txt: 4209 bytes, checksum: 779e158b37117bacb25c6a95cdd9f559 (MD5) Previous issue date: 2021-04-26 Embargo set by: Seth Robbins for item 118577 Lift date: 2023-09-17T02:34:57Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system U of I Only application/pdf http://hdl.handle.net/2142/110734 en Copyright 2021 Patrick Wang Silicon Carbide MOSFET Reliability Condition Monitoring DC-DC converter Power Electronics Gate Driver Circuits LLC resonant converter Condition monitoring of SiC MOSFETs on LLC resonant converter text Thesis Electrical & Computer Eng Electrical & Computer Engr University of Illinois at Urbana-Champaign Thesis M.S.