2026-09-20T22:22:24Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/113135 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Feng, Milton Feng, Milton Dallesasse, John M Jin, Jianming Dragic, Peter D Peng, Yu-Ting 2022-01-12T22:34:50Z 2022-01-12T22:34:50Z 2024-01-12T22:35:30Z 2021-07-01 2021-08 The high-speed optical transceivers require high-speed photodetector to be paired with high-speed vertical-cavity surface-emitting lasers (VCSELs) for short-range transmission at 850 nm. High-speed photodetector holds the key to higher data rate and lower energy consumption, which can help resolve the rising data traffic with high power efficiency. As for wireless communication, Indium phosphide (InP) heterojunction bipolar transistors (HBTs) are widely deployed in high-speed mixed signaling and radio-frequency (RF) instruments because of their outstanding ability to amplify the signals at high-speed bandwidth. Moreover, inherent material properties of InP such as high durability of the breakdown field and fast electron drift velocity make this material one of the suitable candidates when it comes to power amplifier applications within millimeter-wave spectrums. In this work, the development of the 50 Gb/s P-i-N photodetector Type-II InP DHBT for 5G power amplifier application will be presented and discussed. The development work of the photodetector includes the design consideration and process optimization, the dark current and bandwidth characterization of the fabricated device, followed by the impulse response measurement and microwave modeling. The development of Type-II InP DHBT consists of the review of the previous InP DHBT works at UIUC, plasma-enhanced InP dry-etching process development, DC and small-signal characterization, physical parameter extraction and ADS microwave modeling. Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2023-08-01 The student, Yu-Ting Peng, accepted the attached license on 2021-06-30 at 19:00. The student, Yu-Ting Peng, submitted this Dissertation for approval on 2021-06-30 at 19:20. This Dissertation was approved for publication on 2021-07-01 at 17:47. DSpace SAF Submission Ingestion Package generated from Vireo submission #16741 on 2022-01-12 at 12:52:48 Made available in DSpace on 2022-01-12T22:34:50Z (GMT). No. of bitstreams: 2 PENG-DISSERTATION-2021.pdf: 5969949 bytes, checksum: b4dc5bb5fd8c50610d3a3cb6d06e5679 (MD5) LICENSE.txt: 4209 bytes, checksum: 2728e9c31aa540b276a02eeb89be6642 (MD5) Previous issue date: 2021-07-01 Embargo set by: Seth Robbins for item 121061 Lift date: 2024-01-12T22:35:30Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system U of I Only application/pdf http://hdl.handle.net/2142/113135 en Copyright 2021 Yu-Ting Peng Type-II InP, power amplifier, millimeter-wave, 5G, photodetector, high speed optical link Development of InP DHBT for 5G millimeter-wave power amplifier and GaAs photodetector for 50 Gb/s optical link text Thesis Electrical & Computer Eng Electrical & Computer Engr University of Illinois at Urbana-Champaign Dissertation Ph.D.