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oai:www.ideals.illinois.edu:2142/13834 2023-07-10 col_2142_13836 col_2142_5131 col_2142_9 com_2142_13835 com_2142_234 com_2142_5130 com_2142_8

2009-09-25T21:12:40Z 2009-09-25T21:12:40Z 2009-09-25 Abelson, John R. Girolami, Gregory S. Rockett, Angus A. Braun, Paul V. Earles, Susan K. Lazarz, Teresa S. Materials and thin film processing development has been and remains key to continuing to make ever smaller, or miniaturized, microelectronic devices. In order to continue miniaturization, conformal, low-temperature deposition of new electronic materials is needed. Two techniques capable of conformality have emerged: chemical vapor deposition (CVD) and atomic layer deposition (ALD). Here, two processes for deposition of materials which could be useful in microelectronics, but for which no low-temperature, conformal process has been established as commercializable, are presented. One is ruthenium, intended for use in interconnects and in dynamic random access memory electrodes, a known material for use in microelectronics but for which a more conformal, yet fast process than previously demonstrated is required. The other is manganese nitride, which could be used as active magnetic layers in devices or as a dopant in materials for spintronics, which is not yet established as a desired material in part due to the lack of any previously known CVD or ALD process for deposition. not peer reviewed Submitted by Teresa Lazarz (slazarz2@illinois.edu) on 2009-09-25T21:02:49Z No. of bitstreams: 1 TL_Thesis_Bound.pdf: 1741385 bytes, checksum: 64f61d6823126283b9606885592d01a0 (MD5) Approved for entry into archive by Sarah Shreeves(sshreeve@illinois.edu) on 2009-09-25T21:12:40Z (GMT) No. of bitstreams: 1 TL_Thesis_Bound.pdf: 1741385 bytes, checksum: 64f61d6823126283b9606885592d01a0 (MD5) Made available in DSpace on 2009-09-25T21:12:40Z (GMT). No. of bitstreams: 1 TL_Thesis_Bound.pdf: 1741385 bytes, checksum: 64f61d6823126283b9606885592d01a0 (MD5) Previous issue date: 2009-09-25 unpublished http://hdl.handle.net/2142/13834 en chemical vapor deposition (CVD) ruthenium manganese nitride Ru Mn-N film deposition Low-Temperature Chemical Vapor Deposition of Ruthenium and Manganese Nitride Thin Films Dissertation / Thesis text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.