<?xml version="1.0" encoding="UTF-8"?>
<?xml-stylesheet type="text/xsl" href="/oai-pmh.xsl"?>
<OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd">
  <responseDate>2026-09-21T14:03:14Z</responseDate>
  <request identifier="oai:www.ideals.illinois.edu:2142/14655" metadataPrefix="etdms" verb="GetRecord">https://www.ideals.illinois.edu/oai-pmh</request>
  <GetRecord>
    <record>
      <header>
        <identifier>oai:www.ideals.illinois.edu:2142/14655</identifier>
        <datestamp>2023-07-10</datestamp>
        <setSpec>col_2142_14837</setSpec>
        <setSpec>col_2142_5131</setSpec>
        <setSpec>com_2142_14836</setSpec>
        <setSpec>com_2142_234</setSpec>
        <setSpec>com_2142_5130</setSpec>
      </header>
      <metadata>
        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:contributor>Ruzic, David N.</dc:contributor>
          <dc:contributor>Ruzic, David N.</dc:contributor>
          <dc:creator>Struck, Corey R.</dc:creator>
          <dc:date>2010-01-06T16:20:35Z</dc:date>
          <dc:date>2010-01-06T16:20:35Z</dc:date>
          <dc:date>2010-01-06T16:20:35Z</dc:date>
          <dc:description>As semiconductor feature sizes continue to decrease, the phenomena of line
edge roughness (LER) becomes more disruptive in chip manufacturing.  While
many efforts are underway to decrease LER from the photoresist, post-develop
smoothing techniques may be required to continue shrinking chip features
economically.  This work reports on one such method employing the use of an
ion beam at grazing incidence along the features.  This method smooths
relatively long spatial length LER, a potential advantage over other smoothing techniques that focus on just molecular scale LER.  LER reduction numbers
Variables include beam energy and angular dependence.  LER
measurements are taken using Hitachi image analysis software on top-down analytical SEM measurements.</dc:description>
          <dc:description>Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2009-12-03T15:22:41Z
Item was in collections:
University of Illinois Theses &amp; Dissertations (ID: 1)
No. of bitstreams: 1
Struck_Corey.pdf: 23327281 bytes, checksum: a1fefe452bb6c27cd789cc92afd26727 (MD5)</dc:description>
          <dc:description>Made available in DSpace on 2010-01-06T16:20:35Z (GMT). No. of bitstreams: 5
license.txt: 4060 bytes, checksum: 98b131b9d313fd33c590a995b8f45e2d (MD5)
Struck_Corey.pdf: 23334295 bytes, checksum: b22a2af3fa92d0a59683bd27f4d3e081 (MD5)
1_Struck_Corey.pdf: 23335427 bytes, checksum: 3e7109ed64d76467dddcf65c0245920d (MD5)
2_Struck_Corey.pdf: 23327281 bytes, checksum: a1fefe452bb6c27cd789cc92afd26727 (MD5)
3_Struck_Corey.pdf: 23348761 bytes, checksum: 223d644e0b43b239458e8f5f7acd2907 (MD5)</dc:description>
          <dc:identifier>http://hdl.handle.net/2142/14655</dc:identifier>
          <dc:language>en</dc:language>
          <dc:rights>Copyright 2009 Corey R. Struck</dc:rights>
          <dc:subject>Line Edge Roughness</dc:subject>
          <dc:subject>Line Width Roughness</dc:subject>
          <dc:title>Reduction of Line Edge Roughness in Semiconductor Photoresist by Means of a Grazing Incidence Ion Beam</dc:title>
          <dc:date>2009-12</dc:date>
          <degree>
            <department>Nuclear Plasma and Radiological Engineering</department>
            <departmentCode>1973</departmentCode>
            <discipline>Nuclear Engineering</discipline>
            <disciplineCode>0139</disciplineCode>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Thesis</level>
            <name>M.S.</name>
            <program>MS:Nuclear Engineering -UIUC</program>
            <programCode>10KS0139MS</programCode>
          </degree>
        </thesis>
      </metadata>
    </record>
  </GetRecord>
</OAI-PMH>
