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        <identifier>oai:www.ideals.illinois.edu:2142/14672</identifier>
        <datestamp>2023-07-10</datestamp>
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        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:contributor>Li, Xiuling</dc:contributor>
          <dc:contributor>Li, Xiuling</dc:contributor>
          <dc:creator>Dowdy, Ryan S.</dc:creator>
          <dc:date>2010-01-06T16:20:58Z</dc:date>
          <dc:date>2010-01-06T16:20:58Z</dc:date>
          <dc:date>2010-01-06T16:20:58Z</dc:date>
          <dc:description>Planar &lt;110&gt; GaAs nanowires and quantum dots   grown by atmospheric MOCVD have 
been introduced to non-standard growth conditions such as incorporating Zn and growing them 
on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited 
periodic notching along the axis of the wire that is dependent on Zn/Ga gas phase molar ratios. 
Planar nanowires grown on suspended thin films give insight into the mobility of the seed 
particle and change in growth direction. Nanowires that were grown on the off-cut sample 
exhibit anti-parallel growth direction changes. Quantum dots are grown on suspended thin films 
and show preferential growth at certain temperatures. Envisioned nanowire applications include 
twin-plane superlattices, axial pn-junctions, nanowire lasers, and the modulation of nanowire 
growth direction against an impeding barrier and varying substrate conditions.</dc:description>
          <dc:description>Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2009-12-04T00:35:56Z
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University of Illinois Theses &amp; Dissertations (ID: 1)
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          <dc:identifier>http://hdl.handle.net/2142/14672</dc:identifier>
          <dc:language>en</dc:language>
          <dc:rights>Copyright 2009 Ryan S. Dowdy</dc:rights>
          <dc:subject>nanowire</dc:subject>
          <dc:subject>Vapor-liquid-solid (VLS)</dc:subject>
          <dc:subject>III-V</dc:subject>
          <dc:subject>quantum dot</dc:subject>
          <dc:subject>gaas</dc:subject>
          <dc:subject>offcut</dc:subject>
          <dc:subject>suspended</dc:subject>
          <dc:subject>zinc</dc:subject>
          <dc:subject>Indium Arsenide (InAs)</dc:subject>
          <dc:subject>nanostructure</dc:subject>
          <dc:subject>movpe</dc:subject>
          <dc:subject>mocvd</dc:subject>
          <dc:title>Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition</dc:title>
          <dc:date>2009-12</dc:date>
          <degree>
            <program>PHD:Electr &amp; Computer Eng-UIUC</program>
            <programCode>10KS1200PHD</programCode>
            <department>Electrical &amp; Computer Eng</department>
            <departmentCode>1933</departmentCode>
            <discipline>Electrical &amp; Computer Engr</discipline>
            <disciplineCode>1200</disciplineCode>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Thesis</level>
            <name>M.S.</name>
          </degree>
        </thesis>
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