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oai:www.ideals.illinois.edu:2142/14740 2023-07-10 col_2142_8888 col_2142_5131 com_2142_8887 com_2142_234 com_2142_5130

Feng, Milton Feng, Milton Holonyak, Nick, Jr. Cheng, Keh-Yung Jin, Jianming Hsieh, Kuang-Chien Then, Han Wui 2010-01-06T17:48:34Z 2010-01-06T17:48:34Z 2012-01-07T11:00:11Z 2010-01-06T17:48:34Z The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of its optical properties. These potentially lead to advantageous and useful features for designing high-speed optical transmitters that operate without the limitations of resonance, a feature common in the operation of semiconductor (two-terminal) diode lasers. The characteristics of the transistor laser are studied by considering the charge transport, and the coupling of the photon and quantum-mechanical electron-hole recombination dynamics in the operation of the transistor laser. An analytical understanding of these physical characteristics is developed based on experimental data, and a computational model of the transistor laser is developed for device engineering and circuit design applications. Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2009-11-16T19:44:11Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 Then_HanWui.pdf: 2981975 bytes, checksum: 31be0e43b99eb7627c487fcaf9c62d90 (MD5) Then_HanWui.pdf: 2790273 bytes, checksum: bb99193dbe9f0fa8747eafbf8b1ec163 (MD5) Made available in DSpace on 2010-01-06T17:48:34Z (GMT). No. of bitstreams: 4 license.txt: 4058 bytes, checksum: 2f6c52e4d79df0ca9daebf1b20ca4c58 (MD5) Then_HanWui.pdf: 2981975 bytes, checksum: 31be0e43b99eb7627c487fcaf9c62d90 (MD5) 1_Then_HanWui.pdf: 2790273 bytes, checksum: bb99193dbe9f0fa8747eafbf8b1ec163 (MD5) 2_Then_HanWui.pdf: 3022790 bytes, checksum: ce10b841b2c366cdcdcb212865483573 (MD5) Item marked as restricted to the 'Administrator' Group (id=1) by William Ingram (wingram2@illinois.edu) on 2010-01-06T17:49:44Z Item is restricted until 2012-01-06T17:49:44Z Item reinstated by Sarah Shreeves (sshreeve@illinois.edu) on 2012-01-07T11:00:11Z Item was in collections: Dissertations and Theses - Electrical and Computer Engineering (ID: 446) University of Illinois Dissertations and Theses (ID: 204) No. of bitstreams: 5 2_Then_HanWui.pdf.txt: 135752 bytes, checksum: 90b06a81baa4957d6d88294241a8e4ae (MD5) license.txt: 4058 bytes, checksum: 2f6c52e4d79df0ca9daebf1b20ca4c58 (MD5) Then_HanWui.pdf: 2981975 bytes, checksum: 31be0e43b99eb7627c487fcaf9c62d90 (MD5) 1_Then_HanWui.pdf: 2790273 bytes, checksum: bb99193dbe9f0fa8747eafbf8b1ec163 (MD5) 2_Then_HanWui.pdf: 3022790 bytes, checksum: ce10b841b2c366cdcdcb212865483573 (MD5) Item released from any restrictions by Sarah Shreeves (sshreeve@illinois.edu) on 2012-01-07T11:00:11Z http://hdl.handle.net/2142/14740 en Copyright 2009 Han Wui Then transistor laser light-emitting transistor Heterojunction Bipolar Transistor (HBT) Diode Laser Quantum Well differential gain recombination current gain tunnel junction Characteristics, Theory and Modeling of the Transistor Laser 2009-12 Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Dissertation Ph.D. PHD:Electr & Computer Eng-UIUC 10KS1200PHD