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Seebauer, Edmund G. Noh, Kyong Wook 2010-05-18T18:52:53Z 2010-05-18T18:52:53Z 2012-05-19T10:00:11Z 2010-05-18T18:52:53Z Defects in semiconductors have been studied for many years, with a view toward controlling their behavior through various forms of defect engineering. In the Si-based microelectronics industry, numerous methods to characterize and control the behavior of defects have been developed, including novel techniques such as co-implantation, millisecond annealing, photostimulation and surface engineering. Closely related, yet unique defect engineering efforts have also been made for non-Si based microelectronic applications as well. The accumulated knowledge stemmed from microelectronics should also be able to be extended to metal oxide semiconductors, where promising applications (e.g., gas sensors and photocatalysts) are gaining increased interest. In particular, the use of surface engineering has been extended to titanium dioxide, opening up new possibilities of defect control. For further investigation of these effects, sulfur has been chosen as a surface controlling adsorbate, which can be used to manipulate the surface states. The successful deposition of the element through electrochemical means has been demonstrated on silicon and titanium dioxide substrates. In addition, experimental and computational studies on the behavior of the cation species in titanium dioxide using isotopic tracers have also been carried out, with an emphasis on the effect of surface states. It follows that the surface state can indeed influence the cation defect behaviors in a significant manner, which in turn affects the self-diffusion profiles. Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-02-18T14:19:29Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 Noh_Kyong Wook.doc: 11240960 bytes, checksum: 8f2aff00518faf7157347e1dff7144b0 (MD5) Noh_Kyong Wook.pdf: 3650323 bytes, checksum: d077ee117ac67657dc57fc7b39f7cd07 (MD5) Made available in DSpace on 2010-05-18T18:52:53Z (GMT). No. of bitstreams: 3 Noh_Kyong Wook.doc: 11240960 bytes, checksum: 8f2aff00518faf7157347e1dff7144b0 (MD5) Noh_Kyong Wook.pdf: 3650323 bytes, checksum: d077ee117ac67657dc57fc7b39f7cd07 (MD5) license.txt: 4056 bytes, checksum: 431468b4e693fc6c610c7c20d76594e4 (MD5) Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Ingram (wingram2@illinois.edu) on 2010-05-18T18:54:47Z Item is restricted until 2012-05-18T18:54:47Z Item reinstated by Sarah Shreeves (sshreeve@illinois.edu) on 2012-05-19T10:00:10Z Item was in collections: Dissertations and Theses - Chemical and Biomolecular Engineering (ID: 591) University of Illinois Dissertations and Theses (ID: 204) No. of bitstreams: 4 Noh_Kyong Wook.pdf.txt: 175136 bytes, checksum: 16eddca312a048135e5063cb60eecd71 (MD5) Noh_Kyong Wook.doc: 11240960 bytes, checksum: 8f2aff00518faf7157347e1dff7144b0 (MD5) Noh_Kyong Wook.pdf: 3650323 bytes, checksum: d077ee117ac67657dc57fc7b39f7cd07 (MD5) license.txt: 4056 bytes, checksum: 431468b4e693fc6c610c7c20d76594e4 (MD5) Item released from any restrictions by Sarah Shreeves (sshreeve@illinois.edu) on 2012-05-19T10:00:11Z http://hdl.handle.net/2142/15964 en Copyright 2010 Kyong Wook Noh Semiconductors Defect Engineering Metal Oxide Titania Titanium Dioxide Defect engineering of metal oxide semiconductors 2010-5 Chemical & Biomolecular Engr 1687 Chemical Engineering 0300 University of Illinois at Urbana-Champaign Thesis M.S. PHD:Chemical Engineering -UIUC 10KS0300PHD