2026-09-21T16:28:01Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/16782 2023-07-10 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Pop, Eric Xiong, Feng 2010-08-20T17:57:43Z 2010-08-20T17:57:43Z 2010-08-20T17:57:43Z 2010-08 Phase change memory (PCM) is a promising candidate for the next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) as interconnects to induce phase change in ultra small regions of Ge2Sb2Te5 (GST), we are able to lower the programming current to less than 10 μA, almost two orders of magnitude less than state-of-the-art PCM devices. Normal memory operations of the nanotube-PCM device are demonstrated using pulse measurements with exceptionally low current and power consumption. Electrical characterizations show that the switching voltage in nanotube-PCM devices is highly scalable. Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-07-20T20:50:21Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Xiong_Feng.pdf: 3322148 bytes, checksum: 9378bceb3b6a7d1941ba839d1fc88f9d (MD5) Made available in DSpace on 2010-08-20T17:57:43Z (GMT). No. of bitstreams: 2 Xiong_Feng.pdf: 3322148 bytes, checksum: 9378bceb3b6a7d1941ba839d1fc88f9d (MD5) license.txt: 4058 bytes, checksum: 0457f6e65301f64f21d77aedc3c7e192 (MD5) http://hdl.handle.net/2142/16782 en Copyright 2010 Feng Xiong phase change memory GeSbTe (GST) chalcogenide carbon nanotubes finite element modeling COMSOL Ultra-low power phase change memory with carbon nanotube interconnects Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Thesis M.S. MS:Electr & Computer Eng-UIUC 10KS1200MS