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oai:www.ideals.illinois.edu:2142/16801 2023-07-10 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

graphene Pop, Eric Dorgan, Vincent E. 2010-08-20T17:58:10Z 2010-08-20T17:58:10Z 2010-08-20T17:58:10Z 2010-08 Transport properties of exfoliated graphene samples on SiO2 are examined from four-probe electrical measurements combined with electrical and thermal modeling. Data are analyzed with practical models including gated carriers, thermal generation, “puddle” charge, and Joule heating. Graphene mobility is characterized as a function of carrier density at temperatures from 300 to 500 K. In addition, electron drift velocity is obtained at high electric fields up to 2 V/μm, at both 80 K and 300 K. Mobility displays a peak vs. carrier density and decreases with rising temperature above 300 K. The drift velocity approaches saturation at fields >1 V/μm, shows an inverse dependence on carrier density (~n^-1/2), and decreases slightly with temperature. Saturation velocity is >3×10^7 cm/s at low carrier density, and remains greater than in Si up to 1.2×10^13 cm^-2 density. Transport appears primarily limited by the SiO2 substrate, but results suggest intrinsic graphene saturation velocity could be more than twice that observed here. Item withdrawn by Rebecca Bryant (rabryant@illinois.edu) on 2010-07-16T18:58:06Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 Dorgan_Vincent.docx: 3321186 bytes, checksum: a5451c2595accb42102b6a105d4a0701 (MD5) Dorgan_Vincent.pdf: 1165306 bytes, checksum: 8a2d0b1836095cc52967ad79c926ec3b (MD5) Made available in DSpace on 2010-08-20T17:58:10Z (GMT). No. of bitstreams: 3 Dorgan_Vincent.docx: 3321186 bytes, checksum: a5451c2595accb42102b6a105d4a0701 (MD5) Dorgan_Vincent.pdf: 1165306 bytes, checksum: 8a2d0b1836095cc52967ad79c926ec3b (MD5) license.txt: 4064 bytes, checksum: c03b7b56dbb98777a9ac592fddb7c450 (MD5) http://hdl.handle.net/2142/16801 en Copyright 2010 Vincent E. Dorgan mobility high-field Mobility and Saturation Velocity in Graphene on Silicon Dioxide Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Thesis M.S. MS:Electr & Computer Eng-UIUC 10KS1200MS