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oai:www.ideals.illinois.edu:2142/16827 2023-07-10 col_2142_5131 col_2142_13836 com_2142_5130 com_2142_13835 com_2142_234

Weaver, John H. Weaver, John H. Abelson, John R. Petrov, Ivan G. Rockett, Angus A. Butera, Robert E. 2010-08-20T17:59:01Z 2010-08-20T17:59:01Z 2010-08-20T17:59:01Z 2010-08 I have combined scanning tunneling microscopy with density functional calculations and Monte Carlo simulations to investigate halogen-induced modifications of Si surfaces, including etching, roughening and step transformations. These investigations have focused on elucidating the atomic-level details associated with the evolution of terrace and step sites on Cl-Si(100)-(2x1) under conditions of halogen supersaturation. I present a novel adsorption mechanism that is accessed upon exposing nearly-saturated Cl-Si(100)-(2x1) to a flux of Cl2, whereby dangling bonds of the nearly-saturated surface mediate the insertion of Cl adsorbates into non-equilibrium adsorption sites. The adsorbates are kinetically trapped within these sites due to energy constraints and lack of available and more favorable adsorption sites. Inserted Cl adsorbates force the surface to evolve along a novel etching pathway at elevated temperature resulting in dimer vacancy formation without the customary Si regrowth features attributed to halogen etching processes. This process is investigated at 700 – 825 K and the reaction mechanism is extracted from analysis of the appropriate rate equations. Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-06-28T15:30:12Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 5 01- Abstract-Dedication-Acknowledgement.doc: 28672 bytes, checksum: 98c42a01905c4b44c8b9e4b1a165dfa7 (MD5) 02 - TABLE OF CONTENTS.doc: 27648 bytes, checksum: d263fa0931e401c7b1b7366f1cd8233d (MD5) 01- Title Page.doc: 24576 bytes, checksum: 7b40b7901dae8c2464560bdacd6ffd29 (MD5) 03 - Main Text Chapters 1-7.doc: 14855168 bytes, checksum: 7daa70fd5b33deee5f69a66fb62242da (MD5) Butera_Robert.pdf: 6018362 bytes, checksum: ddf8ce804a2ac636ab5fdf2b368f0819 (MD5) Made available in DSpace on 2010-08-20T17:59:01Z (GMT). No. of bitstreams: 8 Butera_Robert.pdf: 6018986 bytes, checksum: 27d1c5648989e413498e31c5387a020e (MD5) 1_Butera_Robert.pdf: 6018362 bytes, checksum: ddf8ce804a2ac636ab5fdf2b368f0819 (MD5) 03 - Main Text Chapters 1-7.doc: 14860288 bytes, checksum: ea9c26f40b092430083cb93c17dec744 (MD5) 02 - TABLE OF CONTENTS.doc: 27648 bytes, checksum: ecc9f92de1c9c87db132562afb34a7b0 (MD5) 01- Abstract-Dedication-Acknowledgement.doc: 28672 bytes, checksum: 98c42a01905c4b44c8b9e4b1a165dfa7 (MD5) 01- Title Page.doc: 24576 bytes, checksum: 7b40b7901dae8c2464560bdacd6ffd29 (MD5) 2_Butera_Robert.pdf: 6018986 bytes, checksum: 27d1c5648989e413498e31c5387a020e (MD5) license.txt: 4061 bytes, checksum: 086e44a7743b9b223ff80fbef1f2add3 (MD5) http://hdl.handle.net/2142/16827 en Copyright 2010 Robert E. Butera Scanning Tunneling Microscopy Si(100) Halogen etching Surface Science Steps Halogen-induced modification of silicon surfaces: etching roughening, and step transformations Materials Science & Engineerng 1919 Materials Science & Engr 0130 University of Illinois at Urbana-Champaign Dissertation Ph.D. PHD:Materials Sci & Engr -UIUC 10KS0130PHD