2026-09-20T18:57:08Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/16840 2023-07-10 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Feng, Milton Feng, Milton Holonyak, Nick, Jr. Hsieh, Kuang-Chien Cheng, Keh-Yung Dixon, Forest P. 2010-08-20T17:59:30Z 2010-08-20T17:59:30Z 2010-08-20T17:59:30Z 2010-08 The transistor laser is a unique three-port device that operates simultaneously as a transistor and a laser. With quantum wells incorporated in the base regions of heterojunction bipolar transistors, the transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and electrical-optical characteristics for direct “read-out” of its optical properties. These devices have demonstrated many useful features such as high-speed optical transmission without the limitations of resonance, non-linear mixing, frequency multiplication, negative resistance, and photon-assisted switching. To date, all of these devices operate as multi-mode lasers without any type of wavelength selection or stabilizing mechanisms. Stable single-mode distributed feedback diode laser sources are important in many applications including spectroscopy, as pump sources for amplifiers and solid-state lasers, for use in coherent communication systems, and now as TLs potentially for integrated optoelectronics. The subject of this work is to expand the future applications of the transistor laser by demonstrating the theoretical background, process development and device design necessary to achieve singlelongitudinal- mode operation in a three-port transistor laser. A third-order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength of 959.75 nm and threshold current of 13 mA operating at -70 °C. For devices with cleaved ends a side-mode suppression ratio greater than 25 dB has been achieved. Item withdrawn by Rebecca Bryant (rabryant@illinois.edu) on 2010-06-16T15:20:22Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 Dixon_Forest.docx: 21990726 bytes, checksum: 844497e59080cd4609540cd0505b6ccb (MD5) Dixon_Forest.pdf: 3211606 bytes, checksum: 358e1b6a7e4cfda90a7b7a98005bdee0 (MD5) Made available in DSpace on 2010-08-20T17:59:30Z (GMT). No. of bitstreams: 3 Dixon_Forest.docx: 21990726 bytes, checksum: 844497e59080cd4609540cd0505b6ccb (MD5) Dixon_Forest.pdf: 3211606 bytes, checksum: 358e1b6a7e4cfda90a7b7a98005bdee0 (MD5) license.txt: 4060 bytes, checksum: c30b915eab36566d227f580f94bc9609 (MD5) http://hdl.handle.net/2142/16840 en Copyright Forest P. Dixon Transistor laser Distributed feedback Nanoimprint lithography Design and development of distributed feedback transistor lasers Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Dissertation Ph.D. PHD:Electr & Computer Eng-UIUC 10KS1200PHD