2026-09-18T19:09:22Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/18297 2023-07-10 col_2142_8888 col_2142_5131 com_2142_8887 com_2142_234 com_2142_5130

Feng, Milton Bambery, Rohan 2011-01-14T22:45:18Z 2011-01-14T22:45:18Z 2011-01-14T22:45:18Z Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron mobility which is a prerequisite for high frequency operation. InGaAs/InP pseudomorphic heterojunction bipolar transistors (HBTs) have demonstrated fT of 765 GHz at room temperature and InP based high electron mobility transistors (HEMTs) have demonstrated fMax of 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. The work described in this thesis involves material characterization and process development for HEMT fabrication on this material system. Item withdrawn by Rebecca Bryant (rabryant@illinois.edu) on 2010-10-08T14:38:50Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Bambery_Rohan.pdf: 12482483 bytes, checksum: e2a79d689ea1d0c6b177cc91e2078bb8 (MD5) Made available in DSpace on 2011-01-14T22:45:18Z (GMT). No. of bitstreams: 2 Bambery_Rohan.pdf: 12482483 bytes, checksum: e2a79d689ea1d0c6b177cc91e2078bb8 (MD5) license.txt: 4063 bytes, checksum: a2bcd037833503ca72e749a05cc3e029 (MD5) http://hdl.handle.net/2142/18297 en Copyright 2010 Rohan K. Bambery High Electron Mobility Transistor (HEMT) Aluminium Antimonide (AlSb) Indium Arsenide (InAs) Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications 2010-12 Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Thesis M.S. MS:Electr & Computer Eng-UIUC 10KS1200MS