2026-09-21T17:37:57Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/18461 2023-07-10 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Lyding, Joseph W. Zhang, Fan 2011-01-14T22:51:36Z 2011-01-14T22:51:36Z 2011-01-14T22:51:36Z In this thesis, two major modifications to an ultra-high-vacuum scanning tunneling microscope system are described: an update to the cooling plate structure for more effective cooling of the dipstick and sample holder, and the installation of a capillary doser for concentrating the precursor gas to the tip-ample junction during silicon nanostructure growth. The updated cooling plate is able to shorten the total sample preparation time from 6 hours to 3 hours. The capillary doser lowers the base pressure during the silicon growth experiment by two orders of magnitude. The system operation after the system modification was tested. The system is now ready for subsequent silicon nanostructure growth using disilane gas. Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-11-29T19:34:59Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Zhang_Fan.pdf: 7294638 bytes, checksum: 2dd2e5642d80bf263eacf70efe1418e1 (MD5) Made available in DSpace on 2011-01-14T22:51:36Z (GMT). No. of bitstreams: 2 Zhang_Fan.pdf: 7294638 bytes, checksum: 2dd2e5642d80bf263eacf70efe1418e1 (MD5) license.txt: 4059 bytes, checksum: d878131923736175eb5cbd77cf2452bf (MD5) http://hdl.handle.net/2142/18461 en Copyright 2010 Fan Zhang scanning tunneling microscope (STM) silicon nanostrucuture Modification of an ultra-high-vacuum scanning tunneling microscope for silicon nanostructure fabrication 2010-12 Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Thesis M.S. MS:Electr & Computer Eng-UIUC 10KS1200MS