2026-09-19T02:36:20Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/18567 2023-07-10 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Feng, Milton Feng, Milton Holonyak, Nick, Jr. Jin, Jianming Schutt-Ainé, José E. James, Adam L. 2011-01-21T22:46:49Z 2011-01-21T22:46:49Z 2013-01-22T11:00:26Z 2011-01-21T22:46:49Z 2010-12 The transistor laser (TL) o ers advantages over conventional diode laser structure. The TL uses high base doping and minority carrier collection to reduce the recombination lifetime in the active region of the device to <30 ps. A fast recombination lifetime <30 ps reduces the photon-carrier resonance when modulating the device at RF frequencies. However, the transistor laser with high intrinsic optical speed is limited by more than just internal recombination lifetime; it is also limited by parasitic resistances and capacitances. Small signal bandwidth of 20 GHz and digital modulation of 20 Gbit/s was obtained by reducing or eliminating extrinsic parasitics which limit device performance through the optimization of device geometry and process conditions. Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-09-27T17:59:03Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 James_Adam.pdf: 23188432 bytes, checksum: 58fc1c4f958a17ce376ceccacc51b067 (MD5) Made available in DSpace on 2011-01-21T22:46:49Z (GMT). No. of bitstreams: 2 James_Adam.pdf: 23188432 bytes, checksum: 58fc1c4f958a17ce376ceccacc51b067 (MD5) license.txt: 4059 bytes, checksum: ce8c8cd609419aa305dd3f31c08eb929 (MD5) Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Ingram (wingram2@illinois.edu) on 2011-01-21T22:48:20Z Item is restricted until 2013-01-21T22:47:37Z Item reinstated by Sarah Shreeves (sshreeve@illinois.edu) on 2013-01-22T11:00:26Z Item was in collections: University of Illinois Dissertations and Theses (ID: 204) Dissertations and Theses - Electrical and Computer Engineering (ID: 446) No. of bitstreams: 3 James_Adam.pdf.txt: 105292 bytes, checksum: 6af0f1722ab7955d27c7b2c496698ba1 (MD5) James_Adam.pdf: 23188432 bytes, checksum: 58fc1c4f958a17ce376ceccacc51b067 (MD5) license.txt: 4059 bytes, checksum: ce8c8cd609419aa305dd3f31c08eb929 (MD5) Item released from any restrictions by Sarah Shreeves (sshreeve@illinois.edu) on 2013-01-22T11:00:26Z http://hdl.handle.net/2142/18567 en Copyright 2010 Adam James Transistor Laser Process Development for High Speed Transistor Laser Operation Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Dissertation Ph.D. PHD:Electr & Computer Eng-UIUC 10KS1200PHD