2026-09-20T04:22:29Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/18640 2023-07-10 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Adesida, Ilesanmi Adesida, Ilesanmi Jain, Kanti Kim, Kyekyoon Bishop, Stephen G. Yeo, Eng Guan 2011-01-21T22:52:48Z 2011-01-21T22:52:48Z 2013-01-22T11:00:18Z 2011-01-21T22:52:48Z 2010-12 Phase change random access memory (PCRAM) is a leading contender for next generation nonvolatile memory. The phase change mechanism from high resistance amorphous phase to low resistance crystalline phase in nano-timescale is the most important characteristic of these materials. However, full understanding of the mechanism is still not achieved. Two time parameters were identified from the transient waveform, namely the delay and current recovery times. The link between crystallization kinetics and the transient phase change effect was established by associating nucleation with delay time and growth with current recovery time. Real-time crystallization characterization was achieved. Parasitic capacitance had strong implications on the programming performance of PCRAM. Larger parasitic capacitance results in a larger leakage current, and hence higher applied voltage for RESET operation needs to be applied. The larger parasitic capacitance also results in an increased quenching time due to a longer voltage fall time, which results in a partially crystallized amorphous state. Continuing work is studying the effect of filament formation on phase change. Filament formation is linked to the actual operating performance of the PCRAM device. This link is important in understanding how phase change occurs electrically and whether filament formation has any effect on scaling of PCRAM devices. Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-09-16T13:15:10Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 EngGuan_Yeo.docx: 7314436 bytes, checksum: 23ba4c6d5b1a3111238446273ae7dacc (MD5) EngGuan_Yeo.pdf: 3718717 bytes, checksum: 60b7abb009857659718bd38e02db868c (MD5) Made available in DSpace on 2011-01-21T22:52:48Z (GMT). No. of bitstreams: 3 Yeo_EngGuan.pdf: 3718717 bytes, checksum: 60b7abb009857659718bd38e02db868c (MD5) license.txt: 4059 bytes, checksum: 20a33a2a6f6c230e210173cdadca9c56 (MD5) EngGuan_Yeo.docx: 7314436 bytes, checksum: 23ba4c6d5b1a3111238446273ae7dacc (MD5) Item marked as restricted to the 'Administrator' Group (id=1) by William Ingram (wingram2@illinois.edu) on 2011-01-21T22:54:03Z Item is restricted until 2013-01-21T22:53:34Z Item reinstated by Sarah Shreeves (sshreeve@illinois.edu) on 2013-01-22T11:00:18Z Item was in collections: University of Illinois Dissertations and Theses (ID: 204) Dissertations and Theses - Electrical and Computer Engineering (ID: 446) No. of bitstreams: 4 Yeo_EngGuan.pdf.txt: 110206 bytes, checksum: e4a6d0b1c71a654f36b1cb854b335dfd (MD5) Yeo_EngGuan.pdf: 3718717 bytes, checksum: 60b7abb009857659718bd38e02db868c (MD5) license.txt: 4059 bytes, checksum: 20a33a2a6f6c230e210173cdadca9c56 (MD5) EngGuan_Yeo.docx: 7314436 bytes, checksum: 23ba4c6d5b1a3111238446273ae7dacc (MD5) Item released from any restrictions by Sarah Shreeves (sshreeve@illinois.edu) on 2013-01-22T11:00:18Z http://hdl.handle.net/2142/18640 en Copyright 2010 Eng Guan Yeo phase change memory Phase change random access memory (PCRAM) transient effect time-resolved filament Transient phase change effect in phase change memory devices Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Dissertation Ph.D. PHD:Electr & Computer Eng-UIUC 10KS1200PHD