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oai:www.ideals.illinois.edu:2142/19075 2023-07-10 col_2142_5131 col_2142_13836 com_2142_5130 com_2142_13835 com_2142_234

Greene, Joseph E. Noel, Jean-Paul Francis 2011-05-07T11:56:12Z 2011-05-07T11:56:12Z 10000-01-01 1990 Si(100) films were doped with 100, 200, 500, and 1000 eV $\sp{11}$B$\sp+$ and $\sp{75}$As$\sp+$ ions during growth by molecular-beam epitaxy (MBE) at temperatures of 800, 650, and 500 $\sp\circ$C. Photoluminescence (PL) and deep level transient spectroscopy (DLTS) were used to assess optical and electronic film quality by identifying and measuring concentrations of ion-induced and inherent residual lattice defects. Bulk-like PL spectra containing sharp, intense, dopant bound-exciton (BE) peaks were consistently obtained from films grown at the highest temperature and lowest ion energy, and no majority-carrier traps were detected by DLTS. For B$\sp+$ ion doping, decreasing the growth temperature from 800$\sp\circ$C or increasing the ion energy from 100 eV caused a suppression in the intensity of sharp, B-BE PL peaks, with an accompanying increase in the concentration of residual lattice defects. In contrast, intensities of As-BE PL peaks from As$\sp+$ ion doped films were relatively constant for growth temperatures $\sb-$650$\sp\circ$C irrespective of ion energy. Ion doping with either B$\sp+$ or As$\sp+$ during growth at 500$\sp\circ$C resulted in films whose PL spectra showed no appreciable BE luminescence and a large background signal at low PL energies. The latter feature was also observed in films grown at 500$\sp\circ$C without ion doping and suggested an inherent limitation of MBE-grown Si at this temperature and a rate of 2 m h$\sp{-1}$. DLTS majority carrier trap concentrations in films grown at 500$\sp\circ$C varied between 2 $\times$ 10$\sp{14}$ cm$\sp{-3}$ and 5 $\times$ 10$\sp{17}$ cm$\sp{-3}$ for 200 and 1000 eV As$\sp+$ ion doping, respectively. Made available in DSpace on 2011-05-07T11:56:12Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9021735.pdf: 4017041 bytes, checksum: d93de8b0178c7c511ec6766cc181097c (MD5) Previous issue date: 1990 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:34:29Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:13:12-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission ETDs are only available to UIUC Users without author permission U of I Only AAI9021735 (UMI)AAI9021735 http://hdl.handle.net/2142/19075 eng Copyright 1990 Noel, Jean-Paul Francis Physics, Condensed Matter Engineering, Materials Science Residual lattice defects in silicon(100) films doped with low-energy positive boron and positive arsenic ions during growth by molecular-beam epitaxy: Variation with ion energy and growth temperature text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.