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Hess, Karl Yoder, Paul Douglas 2011-05-07T12:14:41Z 2011-05-07T12:14:41Z 10000-01-01 1994 A new multiscale method is presented for modeling charge transport across a semi-conductor heterointerface. It has the advantage of increase predictive power due to its treatment of the detailed mixing between Bloch and Tamm electronic states in the interface region; this is of critical importance when a transmission or reflection is accompanied by large changes in perpendicular wavevector, and in the presence of multiple transmission and reflection channels. The electron-phonon interaction is then examined in bulk silicon within the local density functional formalism. Intravalley and intervalley deformation potentials are calculated for a variety of transitions, and the model is compared with available data from both experimental and alternative calculation methods. The formalism developed in this thesis for the calculation of electron-phonon interaction strength is then applied to the calculation of matrix elements for an exhaustive set of transitions throughout the entire Brillouin zone and over a wide range of energies, taking into account the details of each phonon mode. These matrix elements are then incorporated into a unique Monte Carlo charge transport simulator with which transport statistics are calculated. Finally, a new method is presented for the calculation of spectral functions in crystalline solids. Made available in DSpace on 2011-05-07T12:14:41Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9416455.pdf: 3075598 bytes, checksum: 582a682d003b061104347920b1e3f2ce (MD5) Previous issue date: 1994 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:38:37Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:16:07-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission ETDs are only available to UIUC Users without author permission U of I Only AAI9416455 (UMI)AAI9416455 http://hdl.handle.net/2142/19667 eng Copyright 1994 Yoder, Paul Douglas Engineering, Electronics and Electrical First principles Monte Carlo simulation of charge transport in semiconductors text Electrical and Computer Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.