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text Holonyak, Nick, Jr. Deppe, Dennis Glenn 2011-05-07T12:16:58Z 2011-05-07T12:16:58Z 10000-01-01 1989 The process of impurity-induced layer disordering (IILD), or layer intermixing, in Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs), and in related III-V quantum well heterostructures, has developed extensively. A large variety of experimental data on IILD are discussed and provide newer information and further perspective on crystal self-diffusion, impurity diffusion, and also the important defect mechanisms that control diffusion in Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As-GaAs, and in related III-V semiconductors. Based on the behavior of Column III vacancies and Column III interstitials, models for the crystal self-diffusion and impurity diffusion that describe IILD are presented and shown to be consistent with available experimental data. We mention that it may be possible to realize even more advanced device structures using IILD, for example, quantum well wires or quantum well boxes. These will require an even greater understanding of the mechanisms (crystal processes) that control IILD, as well as require more refined methods of pattern definition, masking procedures, and crystal processing. Made available in DSpace on 2011-05-07T12:16:58Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 8916238.pdf: 2996803 bytes, checksum: 79bf486a97e21d7b42ddbf37c844f780 (MD5) Previous issue date: 1989 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:39:06Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:16:24-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission ETDs are only available to UIUC Users without author permission U of I Only AAI8916238 (UMI)AAI8916238 http://hdl.handle.net/2142/19738 eng Copyright 1989 Deppe, Dennis Glenn Engineering, Electronics and Electrical Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures Electrical and Computer Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.