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        <identifier>oai:www.ideals.illinois.edu:2142/19757</identifier>
        <datestamp>2023-07-10</datestamp>
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        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:date>1989</dc:date>
          <dc:contributor>DeTemple, Thomas A.</dc:contributor>
          <dc:creator>Swanson, Paul David</dc:creator>
          <dc:date>2011-05-07T12:17:34Z</dc:date>
          <dc:date>2011-05-07T12:17:34Z</dc:date>
          <dc:date>10000-01-01</dc:date>
          <dc:description>Impurity induced layer disorder-delineated buried channel optical waveguide non-rectilinear routing structures are found to have loss properties equal to or better than other planar optical waveguides. With 3 dB loss angles of 3$\sp\circ$, for simple abrupt bends, and 7$\sp\circ$, for modified abrupt bends, and 3 dB transition lengths of $\sim$300 $\mu$m for S bends with a 100 $\mu$m offset, these waveguides are capable of handling the routing requirements for many opto-electronic integrated circuit applications. A previously uncharacterized electro-absorption effect in a single quantum well graded barrier laser heterostructure was investigated as a means of providing electro-optic modulation and detection. This electroabsorption effect produced a change of over 100 cm$\sp{-1}$ in the modal absorption coefficient with less than a volt change in bias. Based on these findings, the feasibility of using a single heterostructure for the integration of multiple optical devices is addressed.</dc:description>
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  Previous issue date: 1989</dc:description>
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Item is restricted indefinitely.</dc:description>
          <dc:description>Restriction data tranferred 2014-07-01T11:16:28-05:00
Original Data
Group with Access UIUC Users [automated]
Release Date: none
Reason: ETDs are only available to UIUC Users without author permission</dc:description>
          <dc:description>ETDs are only available to UIUC Users without author permission</dc:description>
          <dc:description>U of I Only</dc:description>
          <dc:identifier>AAI9011044</dc:identifier>
          <dc:identifier>(UMI)AAI9011044</dc:identifier>
          <dc:identifier>http://hdl.handle.net/2142/19757</dc:identifier>
          <dc:language>eng</dc:language>
          <dc:rights>Copyright 1989 Swanson, Paul David</dc:rights>
          <dc:subject>Engineering, Electronics and Electrical</dc:subject>
          <dc:subject>Physics, Optics</dc:subject>
          <dc:title>Characteristics of semiconductor optical waveguides fabricated by impurity-induced layer disordering</dc:title>
          <dc:type>text</dc:type>
          <degree>
            <department>Electrical and Computer Engineering</department>
            <discipline>Electrical Engineering</discipline>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Dissertation</level>
            <name>Ph.D.</name>
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