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oai:www.ideals.illinois.edu:2142/19789 2023-07-10 col_2142_5131 col_2142_8859 com_2142_5130 com_2142_8858 com_2142_234

Morkoc, Hadis Lehner, Timothy Scott 2011-05-07T12:18:36Z 2011-05-07T12:18:36Z 10000-01-01 1994 Roughness at the interface between the well and barrier materials in quantum well systems has long been known to be an important factor determining carrier mobility in short period wells. Interface roughness (IR) has also been suggested as a possible decay mechanism in type II AlAs/GaAs heterostructures. Photoluminescence (PL) has been the primary tool used to study type II AlAs/GaAs heterostructures, and can be expected to be strongly influenced by interface roughness both through the carriers' mobility and their decay mechanism. Despite this, IR as a decay mechanism has been the subject of little to no analytical study. Additionally, the available models for IR-limited mobility do not scale with the density of scattering sites and do not include the concept of roughness-bound states. Finally, the nature of the lowest energy PL feature in type II AlAs/GaAs has been in dispute for some time. We address these issues by developing analytical expressions for the IR-limited mobility and IR-mediated optical decay in type II AlAs/GaAs systems which account for the spacing of the roughness and the existence of states bound by the roughness. Furthermore, we develop a computer model which incorporates the above mentioned analytical expressions. By comparing the results of our simulation with experimental data, we show that the unique features observed in this system through PL can be accounted for by the presence of interface roughness. Made available in DSpace on 2011-05-07T12:18:36Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9512457.pdf: 5870434 bytes, checksum: b6a23022aad737c8fa60c8403d7533fd (MD5) Previous issue date: 1994 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:39:26Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:16:37-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission ETDs are only available to UIUC Users without author permission U of I Only AAI9512457 (UMI)AAI9512457 http://hdl.handle.net/2142/19789 eng Copyright 1994 Lehner, Timothy Scott Engineering, Electronics and Electrical Physics, Condensed Matter Interface roughness mediated optical decay and carrier dynamics in type II AlAs/GaAs heterostructures Interface roughness mediated optical decay and carrier dynamics in type II aluminum arsenide/gallium arsenide heterostructures text Physics University of Illinois at Urbana-Champaign Dissertation Ph.D. Physics