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Holonyak, Nick, Jr. El-Zein, Nada Abdullatif 2011-05-07T12:38:38Z 2011-05-07T12:38:38Z 10000-01-01 1995 In this work, water vapor oxidation of Al-bearing III--V semiconductors is employed to form high quality native oxides. The native oxides described are formed at temperatures in the range of 400$\sp\circ$C to 450$\sp\circ$C. Some of the basic properties of the oxide are first described. The properties include the insulating and diffusion masking nature of the oxide as well as its low index of refraction. Device-quality insulating oxides are demonstrated in the $\rm Al\sb{x}Ga\sb{1-x}$As-GaAs and $\rm Al\sb{y}Ga\sb{1-y}$As-GaAs-$\rm In\sb{x}Ga\sb{1-x}As$ systems and are employed for current confinement in stripe-geometry gain guided laser diodes. The insulating properties and low refractive index (n $\sim$ 1.6) of AlGaAs native oxide are employed to fabricate single-longitudinal-mode planar native-oxide AlGaAs-GaAs quantum well heterostructure (QWH) laser diodes. This is done by patterning the stripes into a linear array. Data are also presented on the use of the native oxide to obtain switching and bistability with large hysteresis when fabricating laser diodes. Three-terminal bistable devices are examined. Finally, data are presented on the wavelength selectivity of the native oxide bistable devices. Made available in DSpace on 2011-05-07T12:38:38Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9543579.pdf: 2226273 bytes, checksum: 90837679e13e6d5935b6b61df19ee54a (MD5) Previous issue date: 1995 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:43:46Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:19:11-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission ETDs are only available to UIUC Users without author permission U of I Only AAI9543579 (UMI)AAI9543579 http://hdl.handle.net/2142/20418 eng Copyright 1995 El-Zein, Nada Abdullatif Engineering, Electronics and Electrical Native oxides on aluminum-bearing III-V semiconductors with applications to single-mode behavior, bistability and switching text Electrical and Computer Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.