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        <identifier>oai:www.ideals.illinois.edu:2142/20595</identifier>
        <datestamp>2023-07-10</datestamp>
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        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:contributor>Ravaioli, Umberto</dc:contributor>
          <dc:creator>Lee, Christopher HeeChang</dc:creator>
          <dc:date>2011-05-07T12:43:44Z</dc:date>
          <dc:date>2011-05-07T12:43:44Z</dc:date>
          <dc:date>10000-01-01</dc:date>
          <dc:date>1994</dc:date>
          <dc:description>A Monte Carlo simulator for silicon devices has been developed. The band structure data for this self-consistent device simulator were computed using the empirical pseudopotential method. The ensemble Monte Carlo technique used in the simulations is described in detail. A homogeneous simulator, based on the same transport physics, is used to calibrate the device simulator as well as to indicate the shortcomings of more traditional simulators such as drift-diffusion based models, hydrodynamic and energy balance based models, and nonparabolic band approximation Monte Carlo models. A conventional metal-oxide-semiconductor field effect transistor (MOSFET) is simulated as a test case to validate the simulator. Finally, a floating gate memory element (non-volatile memory) is also examined. In this simulation, the Monte Carlo simulator is used as a post-processor to PISCES IIB in the interest of execution time. Despite the lack of self-consistency and rigor, the simulator is able to produce results which are in good agreement with experimental data.</dc:description>
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  Previous issue date: 1994</dc:description>
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Item is restricted indefinitely.</dc:description>
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Original Data
Group with Access UIUC Users [automated]
Release Date: none
Reason: ETDs are only available to UIUC Users without author permission</dc:description>
          <dc:description>ETDs are only available to UIUC Users without author permission</dc:description>
          <dc:description>U of I Only</dc:description>
          <dc:identifier>AAI9416391</dc:identifier>
          <dc:identifier>(UMI)AAI9416391</dc:identifier>
          <dc:identifier>http://hdl.handle.net/2142/20595</dc:identifier>
          <dc:language>eng</dc:language>
          <dc:rights>Copyright 1994 Lee, Christopher HeeChang</dc:rights>
          <dc:subject>Engineering, Electronics and Electrical</dc:subject>
          <dc:title>Full band ensemble Monte Carlo simulation of silicon devices</dc:title>
          <dc:type>text</dc:type>
          <degree>
            <department>Electrical and Computer Engineering</department>
            <discipline>Electrical Engineering</discipline>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Dissertation</level>
            <name>Ph.D.</name>
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