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(UMI)AAI9124380 Cheng, Keh-Yung Baillargeon, James Nelson 2011-05-07T13:09:23Z 2011-05-07T13:09:23Z 10000-01-01 1991 Gas source molecular beam epitaxy is an advanced crystal growth technique that has been shown to be capable of producing high quality, ultra-thin semiconductor layers and interfaces, excellent dopant and thickness uniformity, and precisely controlled compositions in the aluminum gallium indium arsenide and indium phosphide material systems. This work extends this growth technique to the aluminum gallium indium phosphide material system and demonstrates that it is a potentially viable and attractive technique for producing visible optoelectronic devices. In this work, particular emphasis is placed upon the surface reflection high energy electron diffraction pattern and its relationship to the equilibrium vapor pressure of phosphorus along the Ga + P liquidus. The selective desorption during growth of the surface atoms and its importance to the overall chemical composition, and the accompanied effect on the crystalline quality and optical properties are also discussed. The luminescence properties of epitaxial GaP doped with nitrogen are investigated using cracked PH$\sb3$ and NH$\sb3$. Emphasis is placed on the species generated by the cracking process and that which is responsible for the substitutional incorporation of nitrogen onto the growth surface. In addition, the origin of the natural (111) ordering is discussed and the related energy band gap lowering data are presented. Data are also presented for the thermal and catalytic disassociation of arsine, phosphene and ammonia for various cracker designs. Finally, using the results obtained by extensive material characterization, data for some preliminary optical and electronic device structures are presented, which indicate that this growth technique has significant merit as applied to this material system. Made available in DSpace on 2011-05-07T13:09:23Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9124380.pdf: 3538491 bytes, checksum: 72c822705d8d4fdae0e9071ac1621944 (MD5) Previous issue date: 1991 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:50:57Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:23:20-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission ETDs are only available to UIUC Users without author permission U of I Only AAI9124380 http://hdl.handle.net/2142/21464 eng Copyright 1991 Baillargeon, James Nelson Physics, Electricity and Magnetism Physics, Condensed Matter Engineering, Materials Science Gas source molecular beam epitaxy of aluminum gallium indium phosphide for visible spectrum light emitting diodes text Electrical and Computer Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.