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oai:www.ideals.illinois.edu:2142/22361 2023-07-10 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Krames, Michael Ragan 2011-05-07T13:37:24Z 2011-05-07T13:37:24Z 10000-01-01 1995 "Data are presented showing that ""deep,"" device-quality native oxide structures can be formed in selected areas in $\rm Al\sb{x}Ga\sb{1-x}$As-GaAs quantum well heterostructure (QWH) crystals. The deep oxides are formed using a combination of improved area-selective impurity-induced layer disordering (IILD) and water vapor oxidation at an elevated temperature (525$\sp\circ$C). The resulting oxide extends from the QWH crystal surface into the lower confining layers, penetrating the active region and forming a deep, insulating, low-refractive-index structure with a smooth interface that is free of defects and dislocations." Data are presented on devices utilizing the large lateral index step provided by the deep oxide, including high performance AlGaAs-GaAs QWH stripe-geometry laser diodes, waveguides with low bend loss, and low-threshold curved-geometry lasers. These devices display tight routing capability and suggest compact, integrable geometries for reducing the real-estate requirements (and the cost) of the optoelectronic integrated circuits and for offering less constraint in circuit design. Made available in DSpace on 2011-05-07T13:37:24Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9624398.pdf: 2638927 bytes, checksum: 8b36613f870c9f3e9555a52e7656df8a (MD5) Previous issue date: 1995 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:57:06Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:26:45-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission ETDs are only available to UIUC Users without author permission U of I Only AAI9624398 (UMI)AAI9624398 http://hdl.handle.net/2142/22361 eng Copyright 1995 Krames, Michael Ragan Engineering, Electronics and Electrical Native oxidation of selectively disordered aluminum gallium arsenide quantum well heterostructures: Deep oxide structures for high performance lasers and waveguides text Electrical and Computer Engineering Electrical and Computer Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.