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        <identifier>oai:www.ideals.illinois.edu:2142/22368</identifier>
        <datestamp>2023-07-10</datestamp>
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        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:contributor>Leburton, Jean-Pierre</dc:contributor>
          <dc:creator>Briggs, Stephen Jeffrey</dc:creator>
          <dc:date>2011-05-07T13:37:37Z</dc:date>
          <dc:date>2011-05-07T13:37:37Z</dc:date>
          <dc:date>10000-01-01</dc:date>
          <dc:date>1990</dc:date>
          <dc:description>Because of the particular confinement configuration of one-dimensional systems, the absence of angular randomization during scattering makes the carrier distribution sensitive to external perturbations and causes appreciable deviations from the equilibrium relatively rapidly. A Monte Carlo simulation is presented of a multisubband quasi-one-dimensional gallium arsenide-aluminum gallium arsenide structure. The model includes multiple subbands, polar optic and acoustic phonons, intervalley scattering, and band structure non-parabolicity.</dc:description>
          <dc:description>The linear approximation to the Boltzmann Transport Equation is found to be inconsistent for fields as low as 50 V/cm. A situation occurs under longitudinal field conditions where an upper subband population is enhanced with respect to the bottom subband. Intersubband optical transitions with the possibility of far-infrared stimulated emission seem to be significant.</dc:description>
          <dc:description>Differential mobility in excess of twice the bulk value at 300 K is obtained. The simulation estimates the time required for electrons to undergo intervalley scattering to three-dimensional states to be in the range of 4 nsec down to 1 psec for fields in the range of 100 V/cm to 8 kV/cm. The corresponding distances in the wire vary from 130 $\mu$m down to the submicron range.</dc:description>
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  Previous issue date: 1990</dc:description>
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Item is restricted indefinitely.</dc:description>
          <dc:description>Restriction data tranferred 2014-07-01T11:26:46-05:00
Original Data
Group with Access UIUC Users [automated]
Release Date: none
Reason: ETDs are only available to UIUC Users without author permission</dc:description>
          <dc:description>ETDs are only available to UIUC Users without author permission</dc:description>
          <dc:description>U of I Only</dc:description>
          <dc:identifier>AAI9114182</dc:identifier>
          <dc:identifier>(UMI)AAI9114182</dc:identifier>
          <dc:identifier>http://hdl.handle.net/2142/22368</dc:identifier>
          <dc:language>eng</dc:language>
          <dc:rights>Copyright 1990 Briggs, Stephen Jeffrey</dc:rights>
          <dc:subject>Physics, Electricity and Magnetism</dc:subject>
          <dc:subject>Physics, Condensed Matter</dc:subject>
          <dc:title>Monte Carlo simulation of quasi-one-dimensional semiconductors</dc:title>
          <dc:type>text</dc:type>
          <degree>
            <department>Electrical and Computer Engineering</department>
            <discipline>Electrical and Computer Engineering</discipline>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Dissertation</level>
            <name>Ph.D.</name>
          </degree>
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