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Coleman, James J. Higman, Ted King 2011-05-07T13:41:13Z 2011-05-07T13:41:13Z 10000-01-01 1989 The advance of crystal growth technology, specifically metalorganic chemical vapor deposition (MOCVD) as it relates to this work, has made it practical to manufacture an entirely new class of heterojunction devices. Physical properties of semiconductor heterojunction devices such as resonant tunneling and ballistic transport and various hot electron effects discussed within, have been moved from the status of academic curiosity to physically realizable, useful effects. The theoretical and experimental results from the heterostructure hot electron diode (HHED), a two-terminal device which exhibits S-shaped negative differential resistance, are presented, which shed new light on the transport processes involved in the tunneling, resonant tunneling and thermionic emission processes in semiconductor heterostructures. In support of some of the conclusions about the heterostructure hot electron diode, experiments involving transport of two-dimensional electrons in the negative resistance field effect transistor (NERFET) in high crossed electric and magnetic fields are also presented. In addition, pertinent facts relating to the fabrication and test of these devices are presented in order to obtain a clear picture of the simple techniques used to obtain the data contained herein. Made available in DSpace on 2011-05-07T13:41:13Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 8924837.pdf: 2473551 bytes, checksum: 1d0a702ce28b4d2bdda52447d6080f60 (MD5) Previous issue date: 1989 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:57:54Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:27:11-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission ETDs are only available to UIUC Users without author permission U of I Only AAI8924837 (UMI)AAI8924837 http://hdl.handle.net/2142/22480 eng Copyright 1989 Higman, Ted King Engineering, Electronics and Electrical Experimental investigation of hot electron and related effects in gallium(aluminum)arsenide devices text Electrical and Computer Engineering Electrical and Computer Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.