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oai:www.ideals.illinois.edu:2142/22586 2023-07-10 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Adesida, Ilesanmi Ketterson, Andrew Arthur 2011-05-07T13:44:40Z 2011-05-07T13:44:40Z 10000-01-01 1991 The success of optical interconnects for computer communications depends critically on the development of a viable monolithic optoelectronic integrated circuit (OEIC) technology. A key component of any lightwave communication system is the optical receiver/preamplifier which converts the low-level optical signals into amplified electrical signals. This thesis describes the design, fabrication, and characterization of an OEIC receiver based on submicron pseudomorphic modulation-doped field-effect transistors (MODFETs) and a metal-semiconductor-metal photodetector (MSM-PD). Extensive discrete electronic and photonic device results are presented and related to receiver design. The performance of the overall receiver and individual circuit elements is reported and compared with theory. Pseudomorphic MODFETs based on the InGaAs/GaAs strained-layer material system are chosen due to their superior performance compared to the lattice-matched GaAs system. The design and fabrication of high-speed MODFETs for integrated circuits are presented. Thick, highly doped cap layers and selective gate recess etching are the keys to achieving uniform high-performance MODFETs. The microwave characteristics are studied using a delay time approach to separate out parasitic effects. A conventional GaAs MSM is investigated and is found to be dominated by surface effects which lead to large dark currents and low-frequency gain. Two different MSM designs are presented which eliminate or greatly reduce these anomalous effects. A submicron MSM-PD is shown to exhibit a bandwidth of 70 GHz using a novel integrated photoconductive sampling technique. The design and characterization of a transimpedance preamplifier are described in detail, taking into account such factors as bandwidth, noise, and circuit complexity. An active feedback resistor consisting of a common-gate FET is utilized in the amplifier design. This FET, however, is found to contribute a large parasitic capacitance to the input of the amplifier which limits the bandwidth. Nevertheless, a 3-dB bandwidth of greater than 3 GHz and as high as 4.5 GHz is measured for the overall receiver. Made available in DSpace on 2011-05-07T13:44:40Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9210861.pdf: 6871858 bytes, checksum: 1fc9e95f5443213e563ea5d902d5f9ea (MD5) Previous issue date: 1991 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:58:37Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:27:35-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission ETDs are only available to UIUC Users without author permission U of I Only AAI9210861 (UMI)AAI9210861 http://hdl.handle.net/2142/22586 eng Copyright 1991 Ketterson, Andrew Arthur Engineering, Electronics and Electrical A modulation-doped field-effect transistor-based optoelectronic integrated circuit receiver for optical interconnects text Electrical and Computer Engineering Electrical and Computer Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.