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Lyding, Joseph W. Hubacek, Jerome S. 2011-05-07T13:48:06Z 2011-05-07T13:48:06Z 1992 The Si(100) 2 x 1 surface, a technologically important surface in microelectronics and silicon molecular beam epitaxy (MBE), has been studied with the scanning tunneling microscope (STM) to attempt to clear up the controversy that surrounds previous studies of this surface. To this end, an ultra-high vacuum (UHV) STM/surface science system has been designed and constructed to study semiconductor surfaces. Clean Si(100) 2 x 1 surfaces have been prepared and imaged with the STM. Atomic resolution images probing both the filled states and empty states indicate that the surface consists of statically buckled dimer rows. With electronic device dimensions shrinking to smaller and smaller sizes, the Si-SiO$\sb2$ interface is becoming increasingly important and, although it is the most popular interface used in the microelectronics industry, little is known about the initial stages of oxidation of the Si(100) surface. Scanning tunneling microscopy has been employed to examine Si(100) 2 x 1 surfaces exposed to molecular oxygen in UHV. Ordered rows of bright and dark spots, rotated 45$\sp\circ$ from the silicon dimer rows, appear in the STM images, suggesting that the Si(100)-SiO$\sb2$ interface may be explained with a $\beta$-cristobalite(100) structure rotated by 45$\sp\circ$ on the Si(100) surface. Made available in DSpace on 2011-05-07T13:48:06Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9215829.pdf: 3266765 bytes, checksum: 663846834bb23b83c54eb1d9ca23d3ff (MD5) Previous issue date: 1992 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:59:19Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:27:58-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission Open Restriction set for Item 22822 on 2021-09-01T15:05:54Z with date null by bran3@illinois.edu. Made OA by author request. Open AAI9215829 (UMI)AAI9215829 http://hdl.handle.net/2142/22687 eng Copyright 1992 Hubacek, Jerome S. Engineering, Electronics and Electrical Physics, Condensed Matter Engineering, Materials Science Scanning tunneling microscopy of silicon(100) 2 x 1 text Electrical and Computer Engineering Electrical and Computer Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.