2026-09-23T02:37:43Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/23110 2023-07-10 col_2142_5131 com_2142_5130

Greene, Joseph E. Fons, Paul James 2011-05-07T14:02:32Z 2011-05-07T14:02:32Z 10000-01-01 1990 Single-crystal metastable (III-V)$\sb{\rm 1-x}$(IV)$\sb{\rm x}$ alloys are a new class of semiconductors with the potential, through bandgap engineering, of extending the range of achievable electronic and optical properties available for device design. In addition, metastable (III-V)$\rm \sb{1-x}(IV\sb2)\sb{x}$ semiconducting alloys exhibit unusual long and short range ordering behavior. Although maximum mutual equilibrium solid solubilities for $\rm (GaSb)\sb{1-x}(Ge\sb2)\sb{x}$, $\rm (GaAs)\sb{1-x}(Ge\sb2)\sb{x}$, and $\rm (GaAs)\sb{1-x}(Si\sb2)\sb{x}$ are typically less than 4 at.%, recent developments in ion-surface interaction assisted growth techniques have made it possible to grow alloys ranging throughout the pseudobinary composition diagram. A common characteristic of the (100) oriented (III-V)$\rm \sb{1-x}(IV)\sb{x}$ alloys studied in this work--(GaAs)$\sb{\rm 1-x}$(Ge$\sb2)\sb{\rm x}$, $\rm (GaSb)\sb{1-x}(Ge\sb2)\sb{x}$ and $\rm (GaAs)\sb{1-x}(Si\sb2)\sb{x}$--is that for low x values, they exhibit long-range zincblende order, while for x above a critical value, x$\sb{\rm c}$, they exhibit long-range diamond order. While several metastable (III-V)$\rm \sb{1-x}(IV)\sb{x}$ alloys have been grown and characterized, there still exists no general understanding of this new class of materials. In this work, an energy dependent Monte-Carlo kinetic growth model is developed that simulates the growth of these alloys in a layer-by-layer process. The effects of variations in pair-interaction energies and growth conditions on both structural and electronic properties of the alloys is investigated using the bond-energy kinetic growth model in conjunction with Haydock recursion calculations, a Green's function technique for computation of the valence band density-of-states. The results of these models are compared with experimental results and are used to explain the observed changes in critical composition and other ordering properties among the (III-V)$\rm \sb{1-x}(IV\sb2)\sb{x}$ alloys. Made available in DSpace on 2011-05-07T14:02:32Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9114237.pdf: 4542768 bytes, checksum: 50a2bf444d936d9c5ec1a9c875925f7d (MD5) Previous issue date: 1990 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:02:14Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:29:35-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission ETDs are only available to UIUC Users without author permission U of I Only AAI9114237 (UMI)AAI9114237 http://hdl.handle.net/2142/23110 eng Copyright 1990 Fons, Paul James Physics, Condensed Matter Engineering, Materials Science Growth mechanisms and electronic structure of epitaxial (III-V)(1-x)(IV(2))(x) metastable semiconductors text Physics, Condensed Matter Engineering, Materials Science Physics, Condensed Matter Engineering, Materials Science University of Illinois at Urbana-Champaign Dissertation Ph.D.