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        <identifier>oai:www.ideals.illinois.edu:2142/23284</identifier>
        <datestamp>2023-07-10</datestamp>
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        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:contributor>DeTemple, Thomas A.</dc:contributor>
          <dc:creator>Tang, Tony Kai Tung</dc:creator>
          <dc:date>2011-05-07T14:08:42Z</dc:date>
          <dc:date>2011-05-07T14:08:42Z</dc:date>
          <dc:date>10000-01-01</dc:date>
          <dc:date>1991</dc:date>
          <dc:description>The routing capabilities of waveguides defined by Zn, SiO$\sb2$, and In/SiO$\sb2$ Impurity-Induced Layer Disordering (IILD) of a single GaAs quantum-well graded barrier laser structure are investigated using raised-cosine S-bend geometries. The 3-dB transition length for a 100 $\mu$m offset S-bend waveguides fabricated using the Zn, SiO$\sb2$, or In/SiO$\sb2$ IILD process is less than 300 $\mu$m for near single-mode guides. In addition, vacancy-induced layer disordering (VILD) of the native quantum-well region is investigated and is shown to increase the band gap to a point at which the material is low-loss for radiation generated by a laser made from the native material. The 3-dB length for these blue-shifted waveguides decreases to about 230 $\mu$m due to reduced mode conversion. This VILD technique is also used to fabricate lasers with various blue-shifted emission wavelengths. Secondary Ion Mass Spectroscopy (SIMS) is used to study the separate and co-diffusions of silicon and indium from thin film sources. Indium is inferred to have a higher diffusion coefficient than silicon in GaAs and AlGaAs and to result in a similar degree of impurity-induced disordering of the single quantum-well laser structure.</dc:description>
          <dc:description>Made available in DSpace on 2011-05-07T14:08:42Z (GMT). No. of bitstreams: 2
license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5)
9211008.pdf: 3389678 bytes, checksum: c6f1e45d3d8fccc3ea1ba8c80a1d17c0 (MD5)
  Previous issue date: 1991</dc:description>
          <dc:description>Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:03:26Z
Item is restricted indefinitely.</dc:description>
          <dc:description>Restriction data tranferred 2014-07-01T11:30:14-05:00
Original Data
Group with Access UIUC Users [automated]
Release Date: none
Reason: ETDs are only available to UIUC Users without author permission</dc:description>
          <dc:description>ETDs are only available to UIUC Users without author permission</dc:description>
          <dc:description>U of I Only</dc:description>
          <dc:identifier>AAI9211008</dc:identifier>
          <dc:identifier>(UMI)AAI9211008</dc:identifier>
          <dc:identifier>http://hdl.handle.net/2142/23284</dc:identifier>
          <dc:language>eng</dc:language>
          <dc:rights>Copyright 1991 Tang, Tony Kai Tung</dc:rights>
          <dc:subject>Engineering, Electronics and Electrical</dc:subject>
          <dc:subject>Physics, Electricity and Magnetism</dc:subject>
          <dc:subject>Physics, Condensed Matter</dc:subject>
          <dc:title>Characterization of S-bend optical waveguides fabricated by impurity- and vacancy-induced layer disordering</dc:title>
          <dc:type>text</dc:type>
          <degree>
            <department>Electrical and Computer Engineering</department>
            <discipline>Electrical and Computer Engineering</discipline>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Dissertation</level>
            <name>Ph.D.</name>
          </degree>
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