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Verdeyen, Joseph T. Genis, Patrick Charles 2011-05-07T14:11:31Z 2011-05-07T14:11:31Z 10000-01-01 1990 The application of electroabsorption in an AlGaAs quantum-well semiconductor laser device for optically based electromagnetic field sensing has been studied. A separate confinement heterostructure laser design containing a single quantum well and a steplike waveguiding index profile has demonstrated efficient modulation when operated as a light absorber rather than as an emitter. Observations of changes in the transmitted optical power through this device as a function of the applied forward and/or reverse dc bias have demonstrated nearly linear transfer functions for a given operating wavelength. Measurable changes in transmission were also observed for relatively small changes in applied voltage ($\approx$100 $\mu$V) allowing for the possibility of sensors with high sensitivity. Investigation of the high frequency operation of the device has shown a one-to-one correspondence in amplitude and phase between the applied RF voltage and the modulation of the transmitted optical power over a wide frequency range ($>$1 GHz). Linear operation has been observed for a dynamic range exceeding 75 dB of the applied RF power at 20 MHz. Experiments that had coupled receiving antennas to a modulator have demonstrated the ability to measure an incident electric field of 34 V/m with a 300 MHz bandwidth and the corresponding time derivative of the magnetic field with a 30 MHz bandwidth. At 20 MHz, electric fields as small as 2 V/m have been measured. A 24 dB dynamic range in the measured electric field has been demonstrated and an expected range of 75 dB would imply the ability to measure fields larger than 10$\sp4$ V/m. The demonstrated performance characteristics of wide bandwidth operation and linear response with respect to the applied voltage make these types of semiconductor structures attractive for wide-band electromagnetic field sensing as well as for other low-power modulation applications. Made available in DSpace on 2011-05-07T14:11:31Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9114244.pdf: 3864752 bytes, checksum: 42f018fb6aab2f41a52d55746f66673e (MD5) Previous issue date: 1990 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:03:58Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:30:31-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission ETDs are only available to UIUC Users without author permission U of I Only AAI9114244 (UMI)AAI9114244 http://hdl.handle.net/2142/23363 eng Copyright 1990 Genis, Patrick Charles Engineering, Electronics and Electrical Physics, Condensed Matter Physics, Optics Application of electroabsorption in a semiconductor laser for electromagnetic field sensing text Electrical and Computer Engineering Electrical and Computer Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.