2026-09-22T10:08:03Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/23607 2023-07-10 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Made available in DSpace on 2011-05-07T14:20:25Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9522173.pdf: 5370414 bytes, checksum: b26880bc254946d7f378a337ea5c53a0 (MD5) Previous issue date: 1995 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T15:05:37Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:31:27-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission ETDs are only available to UIUC Users without author permission U of I Only Feng, Milton Shih, Chian-Gauh 2011-05-07T14:20:25Z 2011-05-07T14:20:25Z 10000-01-01 1995 "In the last ten years, we have witnessed the emergence of optoelectronic technology which has revolutionized the communications industry. Unfortunately, this technology is expensive and is thus only affordable to major telecommunication carriers, i.e., phone companies. To further expand the applications of optoelectronic technology from ""long-haul"" communication to short-distance optical interconnects, the development of cost-effective devices for high-performance computing and communication applications is urgently needed." OptoElectronic Integrated Circuits (OEICs) composed of photodetectors and lasers integrated on the same substrate with transistors promise several advantages over their hybrid counterparts; among these are enhanced performance and low-cost. To address the problems or barriers which integration technology faces, the gallium-arsenide MESFET (Metal-Semiconductor Field Effect Transistor) and MSM (Metal-Semiconductor-Metal) technology provides a reasonable way for achieving this end. MESFET technology has been a workhorse in the MMIC industry for several years due to its manufacturability, reliability and performance. Furthermore, GaAs MSM photodetectors typically exhibit responsivities of 0.2 A/W which provide sufficient sensitivity for most short-distance data link applications. The MSM photodetector structure, which consists of a set of interdigitated metal fingers, is notably compatible with the MESFET gate metal making monolithic integration possible. Although the minimum optical fiber loss and dispersion is at 1.55 $\mu$m, for short-distance optical data links the most important issue in choosing an operating wavelength is the cost-effectiveness. The receivers presented in this thesis utilize GaAs-based devices operated at 0.8 $\mu$m. The full realization of this technology should enable implementation of a complete optical transceiver at a significantly reduced cost. The focus of this work is on the development of practical OEIC receivers using the low-cost UIUC 0.6 $\mu$m MESFET process. Both a four-channel 1 Gbit/s OEIC receiver array and a single-channel 2.5 Gbit/s OEIC receiver are the goals of this research. To achieve this, the integration level for a four-channel circuit is over four-hundred active devices. Also included are the modeling of the optoelectronic devices and their implementation for circuit simulation. AAI9522173 (UMI)AAI9522173 http://hdl.handle.net/2142/23607 eng Copyright 1995 Shih, Chian-Gauh Engineering, Electronics and Electrical Design and implementation of low cost multi-gigabit OEIC receivers for the serial and parallel optical data links text Engineering, Electronics and Electrical Engineering, Electronics and Electrical University of Illinois at Urbana-Champaign Dissertation Ph.D.