2026-09-21T18:55:41Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/24169 2023-07-10 col_2142_8888 col_2142_5131 com_2142_8887 com_2142_234 com_2142_5130

Cheng, Keh-Yung Cheng, Keh-Yung Hsieh, Kuang-Chien Feng, Milton Jin, Jianming Liao, Chi-chih 2011-05-25T14:52:50Z 2011-05-25T14:52:50Z 2011-05-25T14:52:50Z 2011-05 For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds and devices, including field effect transistors (FETs) and hetero-junction bipolar transistors (HBTs), was explored using gas-source molecular beam epitaxy (MBE). The first and second parts of the dissertation detail the growth of InAsSb and InGaSb as the channel materials for n- and p-type FETs, respectively. Both compounds were grown metamorphically on InP substrates with a composite AlSb/AlAs0.5Sb0.5 buffer layer, which was proved to be effective in enhancing the epitaxial quality. By optimizing the growth conditions, the intrinsic carrier mobilities of n-type InAsSb and p-type pseudomorphic InGaSb quantum wells could reach 18000 and 600 cm2/V-s at room temperature, respectively. InAsSb FET showed a high transconductance of 350 mS/mm, which indicated the high potential in the high-speed applications. The third part of the dissertation describes the modification of the emitter-base junction of ultra-fast type-II GaAsSb-based HBTs in order to eliminate the carrier blocking and enhance the current gain. InAlP was used to replace the InP emitter and form a type-I emitter-base junction. Results for large devices show that this modification could improve DC current gain from 80 to 120. The results indicate that type-I/II InAlP/GaAsSb HBTs are promising to achieve better radio-frequency (RF) performance with higher current driving capability. Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2011-02-09T14:26:21Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Liao_Chi-chih.pdf: 1403706 bytes, checksum: 049aed65e4a662f733e1686d13262985 (MD5) Made available in DSpace on 2011-05-25T14:52:50Z (GMT). No. of bitstreams: 2 Liao_Chi-chih.pdf: 1403706 bytes, checksum: 049aed65e4a662f733e1686d13262985 (MD5) license.txt: 4056 bytes, checksum: 3a62bef1597feba15203d67cfcbd065e (MD5) http://hdl.handle.net/2142/24169 en Copyright 2011 Chi-chih Liao molecular beam epitaxy Field Effect Transistor (FET) hetero-junction bipolar transistor Antimonide Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy Ph.D. PHD:Electr & Computer Eng-UIUC 10KS1200PHD Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Dissertation